ZXMN10A07Z MOSFET Datasheet

ZXMN10A07Z Datasheet, PDF, Equivalent


Part Number

ZXMN10A07Z

Description

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacture

Diodes

Total Page 7 Pages
Datasheet
Download ZXMN10A07Z Datasheet


ZXMN10A07Z
A Product Line of
Diodes Incorporated
ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE
Product Summary
V(BR)DSS
100V
RDS(on) Max
700mΩ @ VGS = 10V
900mΩ @ VGS = 6V
ID max
TA = 25°C
(Note 6)
1.4A
1.2A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
DC-DC Converters
Power Management functions
Motor control
Disconnect switches
Features and Benefits
Low On-Resistance
Low Threshold
Fast Switching Speed
Low Gate Drive
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.052 grams (approximate)
SOT89
D
Top View
G
S
Device symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
ZXMN10A07ZTA
Marking
7N10
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
7N10
7N10 = Product type Marking Code
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
1 of 7
www.diodes.com
June 2012
© Diodes Incorporated

ZXMN10A07Z
A Product Line of
Diodes Incorporated
ZXMN10A07Z
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 7)
Steady
State
@ VGS = 10V; TA = 25°C (Note 6)
@ VGS = 10V; TA = 70°C (Note 6)
@ VGS = 10V; TA = 25°C (Note 5)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
Value
100
±20
1.4
1.1
1.0
4.2
2.1
4.2
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
TJ, TSTG
Value
1.5
12
2.6
21
83.3
47.4
6.36
-55 to +150
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
Unit
V
V
A
A
A
A
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
10
R
DS(on)
Limited
1
100m
DC
1s
100ms
10m
Single Pulse
T =25°C
amb
10ms
1ms
100µs
1 10 100
VDS Drain-Source Voltage (V)
Safe Operating Area
90
80
T =25°C
amb
70
60
50 D=0.5
40
30
20 D=0.2
10
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100
Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1
10 100
Pulse Width (s)
Pulse Power Dissipation
1k
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
2 of 7
www.diodes.com
June 2012
© Diodes Incorporated


Features ADVANCE INFORMATION A Product Line of D iodes Incorporated ZXMN10A07Z 100V N-CH ANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary V(BR)DSS 100V RDS(on) Max 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V ID max TA = 25°C (Note 6) 1.4A 1.2A Description and Application s This MOSFET has been designed to mini mize the on-state resistance (RDS(on)) and yet maintain superior switching per formance, making it ideal for high effi ciency power management applications. DC-DC Converters • Power Managemen t functions • Motor control • Disco nnect switches Features and Benefits Low On-Resistance • Low Threshold • Fast Switching Speed • Low Gate D rive • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen an d Antimony Free. “Green” Device (No te 3) • Qualified to AEC-Q101 Standar ds for High Reliability Mechanical Data • Case: SOT89 • Case Material: Mol ded Plastic, “Green” Molding Compou nd. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Term.
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