BUT11F

BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications NPN Silicon Transistor 1 TO-220F 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF VEBO IC ICP IB IBP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 850 1000 400 450 9 5 10 2 4 40 150 - 65 ~ 150 Units V V V V V A A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF IC = 100mA, IB = 0 ICES Collector Cut-off Current : BUT11F : BUT11AF IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11F : BUT11AF VBE(sat) Base-Emitter Saturation Voltage : BUT11F : BUT11AF tON tSTG tF Turn On Time Storage Time Fall Time * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω Min. Typ. Max. Units 400 V 450 V 1 mA 1 mA 10 mA 1.5 V 1.5 V 1.3 V 1.3 V 1 µs 4 µs 0.8 µs Thermal Characteristics TC=25°C unless otherwise noted Symbol Parameter RθjC Thermal Resistance, Junction t...