BUT11AF Transistor Datasheet

BUT11AF Datasheet, PDF, Equivalent


Part Number

BUT11AF

Description

NPN Silicon Transistor

Manufacture

Fairchild Semiconductor

Total Page 5 Pages
Datasheet
Download BUT11AF Datasheet


BUT11AF
BUT11F/11AF
High Voltage Power Switching Applications
NPN Silicon Transistor
1 TO-220F
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BUT11F
: BUT11AF
VCEO
Collector-Emitter Voltage
: BUT11F
: BUT11AF
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
850
1000
400
450
9
5
10
2
4
40
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11AF
IC = 100mA, IB = 0
ICES
Collector Cut-off Current
: BUT11F
: BUT11AF
IEBO
VCE(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BUT11F
: BUT11AF
VBE(sat)
Base-Emitter Saturation Voltage
: BUT11F
: BUT11AF
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
VCE = 850V, VBE = 0
VCE = 1000V, VBE = 0
VBE = 9V, IC = 0
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A
VCC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL = 100
Min. Typ. Max. Units
400 V
450 V
1 mA
1 mA
10 mA
1.5 V
1.5 V
1.3 V
1.3 V
1 µs
4 µs
0.8 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
3.125
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001

BUT11AF
Typical Characteristics
1000
VCE = 5V
100
10
1
IC = 5 IB
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
10
IC = 5 IB
1 VBE(sat)
0.1
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
10
Ic MAX (Continuous)
1
0.1
0.01
1
BUT11AF
BUT11F
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
0.1
VCE(sat)
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
10
8
6
4
2
BUT11F
BUT11AF
0
0
200
400
600
800
1000
1200
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Reverse Biased Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[OC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A2, August 2001


Features BUT11F/11AF BUT11F/11AF High Voltage Po wer Switching Applications NPN Silicon Transistor 1 TO-220F 1.Base 2.Collect or 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Volta ge : BUT11F : BUT11AF VCEO Collector- Emitter Voltage : BUT11F : BUT11AF VEB O IC ICP IB IBP PC TJ TSTG Emitter-Bas e Voltage Collector Current (DC) *Colle ctor Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipa tion (TC=25°C) Junction Temperature St orage Temperature Value 850 1000 400 4 50 9 5 10 2 4 40 150 - 65 ~ 150 Units V V V V V A A A A W °C °C Electrical Characteristics TC=25°C unless otherw ise noted Symbol Parameter Test Cond ition VCEO(sus) * Collector-Emitter S ustaining Voltage : BUT11F : BUT11AF I C = 100mA, IB = 0 ICES Collector Cut- off Current : BUT11F : BUT11AF IEBO VC E(sat) Emitter Cut-off Current Collect or-Emitter Saturation Voltage : BUT11F : BUT11AF VBE(sat) Base-Emitter Saturation Voltage : BUT11F : BUT1.
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