BUT11F/11AF
BUT11F/11AF
High Voltage Power Switching Applications
NPN Silicon Transistor
1 TO-220F 1.Base 2.Collector...
BUT11F/11AF
BUT11F/11AF
High Voltage Power Switching Applications
NPN Silicon
Transistor
1 TO-220F 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage : BUT11F : BUT11AF
VCEO
Collector-Emitter Voltage : BUT11F : BUT11AF
VEBO IC ICP IB IBP PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value
850 1000
400 450
9 5 10 2 4 40 150 - 65 ~ 150
Units
V V
V V V A A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF
IC = 100mA, IB = 0
ICES
Collector Cut-off Current : BUT11F : BUT11AF
IEBO VCE(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage : BUT11F : BUT11AF
VBE(sat)
Base-Emitter Saturation Voltage : BUT11F : BUT11AF
tON tSTG tF
Turn On Time Storage Time Fall Time
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0
IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A
IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω
Min. Typ. Max. Units
400 V 450 V
1 mA 1 mA 10 mA
1.5 V 1.5 V
1.3 V 1.3 V
1 µs 4 µs 0.8 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction t...