NTE2947F MOSFET Datasheet

NTE2947F Datasheet, PDF, Equivalent


Part Number

NTE2947F

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2947F Datasheet


NTE2947F
NTE2947 & NTE2947F
MOSFET
NChannel, Enhancement Mode High Speed Switches
TO220 Type Package
Features:
D Available in Standard TO220 (NTE2947) and TO220 Full Pack (NTE2947F)
D RDS(on) = 220 m(Typ) @ VGS = 10V, ID = 9A
D Low Gate Charge (Typ 45nC)
D Low Crss (Typ 25pF)
D 100% Avalanche Tested
D
Applications:
D LCD/LED/PDP TV
D Lighting
D Uninterruptible Power Supply
G
S
Absolute Maximum Ratings:
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30V
Drain
Current, Continuous
TTCC
=
=
+25C .
+100C
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(Note
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.ID. .
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. . 18A
10.8A
Drain Current, Pulsed (Note 1, Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A
Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 945mJ
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.5mJ
Peak Diode Recovery (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Total
Power Dissipation,
NTE2947 . . . . . . .
(.T. C. .=.
.+.2.5..C. ).,.P. D. .
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235W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.88W/C
NTE2947F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38.5W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300C
Maximum Thermal
NTE2947 . .
Resistance,
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JunctiontoCase,
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.R.t.h.JC. .
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0.53C/W
NTE2947F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3C/W
Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. Drain current limited by maximum junction temperature (TO220 Full Pack ONLY).
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 5.2mH, IAS = 18, VDD = 50V, RG = 25, Starting TJ = +25C.
Note 4. ISD 18A, di/dt 200As, VDD BVDSS, starting TJ = +25C

NTE2947F
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
DrainSource Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS VGS = 0v, ID = 250A
500
BVDSS/TJ ID = 250A, Referenced to 25C 0.5
V
V/C
Zero Gate Voltage Drain Current
GateBody Leakage Current Forward
GateBody Leakage Current Reverse
On Characteristics
IDSS
IGSSF
IGSSR
VDS = 500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = 30V, VDS = 0V
VDS = 400V, TC = +125C
Gate Threshold Voltage
Static DrainSource ON Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
RDS(on)
gfs
VDS = VGS, ID = 250A
VGS = 10V, ID = 9A
VDS = 40V, ID = 9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Ciss
Coss
Crss
VDS = 25V, VGS =0V, f = 1MHz
TurnOn Delay Time
TurnOn Rise Time
td(on)
tr
VVDGDS
=
=
21500VV, R, IGD
=
=
18A,
25,
Note
5
TurnOff Delay Time
td(off)
TurnOn Fall Time
tf
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
Qg
Qgs
VVDGSS
=
=
41000VV, ,NIoDte=
18A,
5
GateDrain (“Miller”) Charge
Qgd
SourceDrain Diode Characteristics and Maximum Ratings
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS (Body Diode)
ISM (Body Diode) Note 3
VSD VGS = 0V, IS = 18A
trr
trr
dVIGFS/d=t =0V1,0I0SA=/1s8A,
−−1
− − 100
− − −100
− − 10
3.0 5.0
0.220 0.265
25
2200 2860
330 430
25 40
55 120
165 340
95 200
90 190
45 60
12.5
19
− − 18
− − 72
− − 1.4
500
5.4
Note 3. L = 5.2mH, IAS = 18, VDD = 50V, RG = 25, Starting TJ = +25C.
Note 5. Essentially independent of operating temperature typical characteristics.
A
nA
nA
A
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
C


Features NTE2947 & NTE2947F MOSFET N−Channel, E nhancement Mode High Speed Switches TO 220 Type Package Features: D Availab le in Standard TO−220 (NTE2947) and T O−220 Full Pack (NTE2947F) D RDS(on) = 220 m (Typ) @ VGS = 10V, ID = 9A D Low Gate Charge (Typ 45nC) D Low Crss (Typ 25pF) D 100% Avalanche Tested D Applications: D LCD/LED/PDP TV D Lighti ng D Uninterruptible Power Supply G S Absolute Maximum Ratings: Drain−Sou rce Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltag e, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, Continuous T TCC = = +25C . +100C . . . . . . . . . . . . (Note ..... ..... 1), ... ... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Keywords NTE2947F, datasheet, pdf, NTE, N-Channel, MOSFET, TE2947F, E2947F, 2947F, NTE2947, NTE294, NTE29, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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