NTE2948 MOSFET Datasheet

NTE2948 Datasheet, PDF, Equivalent


Part Number

NTE2948

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2948 Datasheet


NTE2948
NTE2948
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO251 Type Package
D
Features:
D Low DrainSource ON Resistance: RDS(ON) = 4(Typ)
D High Forward Transfer Admittance: |yfs| = 0.6S (Typ)
D Low Leakage Current: IDSS = 100A (Max) (VDS = 400V)
D Enhancement Model: Vth = 2 to 4V (VDS = 10V, ID = 1mA)
Applications:
D DCDC Converter
D Relay Drive
D Motor Drive
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain
Current (Note
DC . . . . . . . .
1),
...
I.D.
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1A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Repetitive Avalanche Energy (Note 3), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Maximum Thermal Resistance:
CChhaannnneell−−ttoo−−CAmasbeie, nRtt,hRCHthCCH. A. .
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6.25C/W
125C/W
Note 1. Please use devices on condition that the channel temperature is below +150C.
Note 2. VDD = 90V, Tch = +25C (initial), L = 183mH, RG = 25.
Note 3. Repetitive rating: pulse width limited by maximum channel temperature.

NTE2948
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
GateSource Leakage Current
IGSS VGS = 25V, VDS = 0V
GateSource Breakdown Voltage
BVGSS IG = 10A, VDS = 0V
Drain Cutoff Current
IDSS
VDS = 400V, VGS = 0
DrainSource Breakdown Voltage
BVDSS ID = 10mA, VGS = 0V
Gate Threshold Voltage
VGS(th) VDS = 10V, ID = 1mA
DrainSource ON Resistance
RDS(on) VGS = 10V, ID = 0.5A
Forward Transfer Admittance
|yfs| VDS = 10V, ID = 0.5A
Input Capacitance
Ciss VGS = 0V, VDS = 10V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
TurnOn Delay Time
Rise Time
td(on)
tr
RVDLD==402000V, ,DVuGtyS=11%0V, ,twID==100.5sA,
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg VGS = 10V, ID = 1A, VDD = 320V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
SourceDrain Diode Ratings and Characteristics
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDR
IDRP
VSDF
trr
Qrr
Note 1
Note 1
IDR = 1A, VGS = 0V
IDR = 1A, VGS = 0V, dIDR/dt = 100A/s
Min Typ Max Unit
− − 10 A
30 − − V
− − 100 A
480 − − V
2.0 4.0 V
4.2 5.5
0.3 0.6
S
145 pF
80 pF
35 pF
56 ns
14 ns
75 ns
26 ns
5.7 nC
3.0 nC
2.7 nC
−− 1A
−− 3A
− − −1.7 V
650 ns
14.6
C
Note 1. Please use devices on condition that the channel temperature is below +150C.


Features NTE2948 MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Packa ge D Features: D Low Drain−Source O N Resistance: RDS(ON) = 4 (Typ) D Hi gh Forward Transfer Admittance: |yfs| = 0.6S (Typ) D Low Leakage Current: IDSS = 100A (Max) (VDS = 400V) D Enhance ment Model: Vth = 2 to 4V (VDS = 10V, I D = 1mA) Applications: D DC−DC Conver ter D Relay Drive D Motor Drive G S A bsolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−So urce Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Drain−Gate Voltag e (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note DC . . . . . . . . 1), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . ..
Keywords NTE2948, datasheet, pdf, NTE, N-Channel, MOSFET, TE2948, E2948, 2948, NTE294, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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