NTE2990 MOSFET Datasheet

NTE2990 Datasheet, PDF, Equivalent


Part Number

NTE2990

Description

P-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2990 Datasheet


NTE2990
NTE2990
MOSFET
PChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack
Features:
D Low DrainSource OnResistance
D Low Input Capacitance
D High Avalanche Capability Ratings
Applications:
D Switching Regulators
D UPS
D DCDC Converters
D General Purpose Power Amplifier
D
G
S
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Drain CCuornretinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +24A
Maximum Power Dissipation,
TTAC
=
=
+255C
+255C
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.P.D. .
....
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
35W
2.0W
Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.775C/W
Note 1. Pulse Width 3 10+s, Duty Cycle 3 1%.
Note 2. Starting Tch = +255C, RG = 25", VGS = 20V " 0.
Rev. 1013

NTE2990
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
DrainSource OnState Resistance
RDS(on) ID = 3A, VGS = 10V
0.55
Gate Threshold Voltage
VGS(th) ID = 1mA, VDS = 10V
4.0 4.8
Forward Transfer Admittance
gfs ID = 3A, VDS = 10V
2.0 3.5
Zero Gate Voltage Drain Current
IDSS VDS = 250V, VGS = 0V
−−
GateSource Leakage Current
IGSS VGS = +30V, VDS = 0V
−−
Input Capacitance
Ciss VDS = 10V, VGS = 0V, f = 1MHz
1040
Output Capacitance
Coss
360
Reverse Transfer Capacitance
Crss
70
TurnOn Time
Rise Time
TurnOff Time
td(on)
tr
td(off)
VRVDGLDS=(o=4n21) "2=51V0,VID, R=G3=A,10",
25
16
47
Fall Time
tf
14
Total Gate Charge
Qg VDD = 200V, VGS = 10V, ID = 6A
23.1
GateSource Charge
Qgs
7.1
GateDrain (“Miller”) Charge
Qgd
12.9
SourceDrain Diode Ratings and Characteristics: (TA = +255C unless otherwise specified)
Diode Forward Voltage
VDSF IDR = 6A, VGS = 0V
0.92
Reverse Recovery Time
Reverse Recovered Charge
trr
Qrr
dIDi/Rdt==65A0,AV/G+Ss = 0V,
155
930
Max
0.80
5.5
100
+100
Unit
"
V
S
+A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
.122 (3.1)
Dia
.165
(4.2)
.173 (4.4) Max
.114 (2.9) Max
GDS
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max


Features NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch TO220 Full Pack Features: D Low Drain−Source On−Re sistance D Low Input Capacitance D High Avalanche Capability Ratings Applicati ons: D Switching Regulators D UPS D DC DC Converters D General Purpose Power Amplifier D G S Absolute Maximum Rat ings: (TA = +255C unless otherwise spec ified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Ga te−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain CCuorn retinntu, oIDus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6A Puls ed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +24A Maximum Power Dissipation, TTAC = = +255C +255C .
Keywords NTE2990, datasheet, pdf, NTE, P-Channel, MOSFET, TE2990, E2990, 2990, NTE299, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)