NTE2925 MOSFET Datasheet

NTE2925 Datasheet, PDF, Equivalent


Part Number

NTE2925

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2925 Datasheet


NTE2925
NTE2925
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
D
Features:
D Low DrainSource ON Resistance: RDS(ON) = 1.35Typ.
D High Forward Transfer Admittance: |Yfs| = 5.0S Typ.
D Low Leakage Current: IDSS = 100A Max. (VDS = 640V)
D EnhancementModel: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA)
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Drain
Current (Note
DC . . . . . . . .
2),
...
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6.A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W
Thermal Resistance, ChanneltoAmbient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc. may cause this device to decrease in reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device.
Please handle with caution.
Note 2. Make sure that the device channel temperature is below +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 14.5mH, RG = 25, IAR = 6A
Note 4. Repetitive rating; pulse width limited by maximum channel temperature.
Rev. 914

NTE2925
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
GateSource Breakdown Voltage
Drain CutOff Current
DrainSource Breakdown Voltage
Gate Threshold Voltage
DrainSource OnResistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
IGSS
V(BR)GSS
IDSS
V(BR)DSS
Vth
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS = 25V, VDS = 0V
VDS = 0V, IG = 10A
VDS = 640V, VGS = 0V
VGS = 0V, ID = 10mA
VDS = 10V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 20V, ID = 3A
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 400V, ID = 3A, RL = 133,
Note 5
ID = 6A, VDS = 400V, VGS = 10V
Note 5. Duty Cycle 1%, tw = 10s.
Min Typ Max Unit
− − 10 A
30 − − V
− − 100 A
800 − − V
2.0 4.0 V
1.35 1.7
2.5 5.0
S
1400 pF
130 pF
30 pF
80 ns
25 ns
220
ns
65 ns
− − 45 nC
− − 25 nC
− − 20 nC
SourceDrain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Continuous Drain Reverse Current
Pulsed Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDR
IDRP
VDSF
trr
Qrr
Note 2
Note 2
IDR = 6A, VGS = 0V
IDR = 6A, VGS = 0V,
diDR/dt = 100A/s
−−
6
− − 18
− − −1.7
1100
10
Unit
A
A
V
ns
C
Note 2. Make sure that the device channel temperature is below +150C.


Features NTE2925 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Ty pe Package D Features: D Low Drain Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittan ce: |Yfs| = 5.0S Typ. D Low Leakage Cur rent: IDSS = 100A Max. (VDS = 640V) D Enhancement−Model: Vth = 2.0V to 4. 0V (VDS = 10V, ID = 1mA) G S Absolut e Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain− Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain−Gate Volt age (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 0V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Dra in Current (Note DC . . . . . . . . 2 ), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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