NTE2927 MOSFET Datasheet

NTE2927 Datasheet, PDF, Equivalent


Part Number

NTE2927

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2927 Datasheet


NTE2927
NTE2927
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
D
Features:
D Low DrainSource ON Resistance: RDS(ON) = 0.58Typ.
D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ.
D Low Leakage Current: IDSS = 10A Max. (VDS = 600V)
D EnhancementModel: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA)
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Drain
Current (Note
DC . . . . . . . .
2),
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10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W
Thermal Resistance, ChanneltoAmbient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc. may cause this device to decrease in reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device.
Please handle with caution.
Note 2. Make sure that the device channel temperature is below +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 6.36mH, RG = 25, IAR = 10A
Note 4. Repetitive rating; pulse width limited by maximum channel temperature.
Rev. 914

NTE2927
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Drain CutOff Current
DrainSource Breakdown Voltage
Gate Threshold Voltage
DrainSource OnResistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
IGSS
IDSS
V(BR)DSS
Vth
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS = 30V, VDS = 0V
VDS = 600V, VGS = 0V
VGS = 0V, ID = 10mA
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 200V, ID = 5A, RL = 40,
Note 5
ID = 10A, VDS = 400V, VGS = 10V
Note 5. Duty Cycle 1%, tw = 10s.
Min Typ Max Unit
− − 1 A
− − 10 A
600 − − V
2.0 4.0 V
0.58 0.75
1.5 6.0
S
1350 pF
135 pF
6 pF
55 ns
22 ns
100
ns
15 ns
25 nC
16 nC
9 nC
SourceDrain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Continuous Drain Reverse Current
IDR Note 2
− − 10
Pulsed Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDRP
VDSF
trr
Qrr
Note 2
IDR = 10A, VGS = 0V
IDR = 10A, VGS = 0V,
diDR/dt = 100A/s
− − 40
− − −1.7
1300
12
Note 2. Make sure that the device channel temperature is below +150C.
Unit
A
A
V
ns
C


Features NTE2927 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Ty pe Package D Features: D Low Drain− Source ON Resistance: RDS(ON) = 0.58 Typ. D High Forward Transfer Admittanc e: |Yfs| = 6.0 S Typ. D Low Leakage Cur rent: IDSS = 10A Max. (VDS = 600V) D Enhancement−Model: Vth = 2.0V to 4.0 V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−S ource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Volt age, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Drain Current (Note DC . . . . . . . . 2), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Keywords NTE2927, datasheet, pdf, NTE, N-Channel, MOSFET, TE2927, E2927, 2927, NTE292, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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