Document
NTE2927 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
D
Features: D Low Drain−Source ON Resistance: RDS(ON) = 0.58 Typ. D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ. D Low Leakage Current: IDSS = 10A Max. (VDS = 600V) D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA)
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Drain
Current (Note DC . . . . . . . .
2), ...
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10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363mJ Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5mJ Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Channel−to−Case, RthCH−C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W Thermal Resistance, Channel−to−Ambient, RthCH−A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc. may cause this device to decrease in reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device. Please handle with caution.
Note 2. Make sure that the device channel temperature is below +150C. Note 3. VDD = 90V, Tch = +25C (Initial), L = 6.36mH, RG = 25, IAR = 10A Note 4. Repetitive rating; pulse width limited by maximum channel temperature.
Rev. 9−14
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current Drain Cut−Off Current Drain−Source Breakdown Voltage Gate Threshol.