DatasheetsPDF.com

NTE2927 Dataheets PDF



Part Number NTE2927
Manufacturers NTE
Logo NTE
Description N-Channel MOSFET
Datasheet NTE2927 DatasheetNTE2927 Datasheet (PDF)

NTE2927 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 0.58 Typ. D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ. D Low Leakage Current: IDSS = 10A Max. (VDS = 600V) D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE2927   NTE2927



Document
NTE2927 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 0.58 Typ. D High Forward Transfer Admittance: |Yfs| = 6.0 S Typ. D Low Leakage Current: IDSS = 10A Max. (VDS = 600V) D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Drain Current (Note DC . . . . . . . . 2), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363mJ Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5mJ Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Channel−to−Case, RthCH−C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W Thermal Resistance, Channel−to−Ambient, RthCH−A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc. may cause this device to decrease in reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device. Please handle with caution. Note 2. Make sure that the device channel temperature is below +150C. Note 3. VDD = 90V, Tch = +25C (Initial), L = 6.36mH, RG = 25, IAR = 10A Note 4. Repetitive rating; pulse width limited by maximum channel temperature. Rev. 9−14 Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Gate Leakage Current Drain Cut−Off Current Drain−Source Breakdown Voltage Gate Threshol.


NTE2926 NTE2927 NTE2928


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)