NTE2928 MOSFET Datasheet

NTE2928 Datasheet, PDF, Equivalent


Part Number

NTE2928

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2928 Datasheet


NTE2928
NTE2928
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D RDS(on) = 550mW Max @ VGS = 10V, ID = 6A
D Low Gate Charge: 22nC Typ
D Low CRSS: 11pF Typ
D 100% Avalanche Tested
D
Applications:
D LCD/LED/PDP TV
D Lighting
D Uninterruptible Power Supply
G
S
Absolute Maximum Ratings: (TC = +255C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Drain CCuornretinntu, oIDus
PulsTTeCCd==(N++o21t50e50C15C).
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11.5A
6.9A
. 46A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 456mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.5A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.7mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Power
DDeisrsaitpeaAtiobnov(eTC+2=5+5C25.5.C.).,
.P.D.
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. . . 165W
1.33W/5C
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Maximum Lead temperature (During Soldering, 1/8” from case, 5 sec ), TL . . . . . . . . . . . . . . +3005C
Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.755C/W
Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25W, starting TJ = +255C.
Note 3. ISD 3 11.5A, di/dt 3 200A/ms, VDD 3 V(BR)DSS, starting TJ = +255C.

NTE2928
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
OFF Characteristics
DrainSource Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
GateBody Leakage Current
ON Characteristics
V(BR)DSS
DV(BR)DSS/DTJ
IDSS
IGSS
VGS = 0V, ID = 250mA, TJ = +25_C
ID = 250mA, Referenced to +25_C
VDS = 500V, VGS = 0
VDS = 400V, TC = +125_C
VGS = +30V, VDS = 0V
500
0.5
Gate Threshold Voltage
Static DrainSource ON Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250mA
VGS = 10V, ID = 6A
VDS = 40V, ID = 6A
3.0
0.55
11.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
GateSource Charge
GateDrain Charge
Switching Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Vf =GS1M= H0Vz, VDS = 25V,
VVDGDS
=
=
41000VV, N, IoDte=
11.5A,
4
985
140
11
22
6
9
TurnOn Delay Time
Rise Time
td(on)
tr
VVDGDS
=
=
21500VV, R, IGD
=
=
11.5A,
25W, Note
4
TurnOff Delay Time
td(off)
Fall Time
tf
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
DrainSource Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS = 0V, IS = 11.5A
trr
Qrr
VdIGFS/d=t =0V1,0I0SAD/m=s11.5A,
24
50
45
30
−−
−−
−−
375
3.5
Note 4. Essentially independent of operating temperature typical characteristics.
Max
1.0
10
+100
5.0
0.65
1315
190
17
30
60
110
100
70
11.5
46
1.4
Unit
V
V/_C
mA
mA
nA
V
W
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
mC


Features NTE2928 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Pa ckage Features: D RDS(on) = 550mW Max @ VGS = 10V, ID = 6A D Low Gate Charge: 22nC Typ D Low CRSS: 11pF Typ D 100% A valanche Tested D Applications: D LCD /LED/PDP TV D Lighting D Uninterruptibl e Power Supply G S Absolute Maximum R atings: (TC = +255C unless otherwise sp ecified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain CCu ornretinntu, oIDus PulsTTeCCd==(N++o21 t50e50C15C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords NTE2928, datasheet, pdf, NTE, N-Channel, MOSFET, TE2928, E2928, 2928, NTE292, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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