NTE2929 MOSFET Datasheet

NTE2929 Datasheet, PDF, Equivalent


Part Number

NTE2929

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2929 Datasheet


NTE2929
NTE2929
MOSFET
NChannel, Enhancement Mode
TO220 Full Pack Type Package
Features:
D Low DrainSource ON Resistance: RDS(on) = 2.3W Typ
D High Forward Transfer Admittance: |Yfs| = 4.4S Typ
D Low Leakage Current: IDSS = 100mA Max (VDS = 720V)
D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)
Applications:
D DCDC Converter
D Motor Driver
G
D
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
DrainGate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain
Current (Note
Continuous .
1),
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5A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 595mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Repetitive Avalanche Energy (Note 3), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Maximum Thermal Resistance, ChanneltoCase, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . 2.78C/W
Maximum Thermal Resistance, ChanneltoAmbient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Please use device on condition that the channel temperature is below +150C.
Note 2. L = 43.6mH, IAR = 5A, VDD = 90V, RG = 25W, Tch = +25C (initial).
Note 3. Repetitive rating; Pulse width limited by maximum channel temperature.
Rev. 914

NTE2929
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Gate Leakage Current
IGSS
VGS = 30V, VDS = 0V
−−
GateSource Breakdown Voltage
V(BR)GSS VDS = 0V, IG = 10mA
30
Drain CutOff Current
IDSS
VDS = 720V, VGS = 0
−−
DrainSource Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 10mA
500
Gate Threshold Voltage
Vth VDS = 10V, ID = 1mA
2.0
DrainSource ON Resistance
RDS(on)
VGS = 10V, ID = 3A
2.3
Forward Transfer Admittance
|Yfs| VDS = 20V, ID = 3A
1.1 4.4
Input Capacitance
Output Capacitance
Ciss
Coss
Vf =GS1M= H0Vz, VDS = 25V,
1200
120
Reverse Transfer Capacitance
Crss
20
TurnOn Delay Time
Rise Time
td(on)
tr
VVDGDS
=
=
21000VV, R, ILD
=
=
3A,
66.7W,
Note
4
90
40
TurnOff Delay Time
td(off)
200
Fall Time
tf
60
Total Gate Charge
Qg VDD = 400V, ID = 5A, VGS = 10V 45
GateSource Charge
Qgs
25
GateDrain (Miller) Charge
Qgd
20
DrainSource Diode Characteristics and Maximum Ratings
10
100
4.0
2.5
Continuous Drain-Source Reverse Current
Pulsed Drain-Source Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDR
IDRP
VDSF
trr
Qrr
Note 1
Note 1
VGS = 0V, IDR = 5A
dVIGDSR/=dt0=V,1I0D0RA=/m5sA,
−−
5
− − 15
− − −1.9
1300
11
Note 1. Please use device on condition that the channel temperature is below +150C.
Note 4. Duty Cycle 1%, tw = 10ms.
Unit
mA
V
mA
V
V
W
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
mC


Features NTE2929 MOSFET N−Channel, Enhancement Mode TO−220 Full Pack Type Package F eatures: D Low Drain−Source ON Resist ance: RDS(on) = 2.3W Typ D High Forward Transfer Admittance: |Yfs| = 4.4S Typ D Low Leakage Current: IDSS = 100mA Max (VDS = 720V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) Appl ications: D DC−DC Converter D Motor D river G D S Absolute Maximum Ratings : (TA = +25C unless otherwise specif ied) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Dra in−Gate Voltage (RGS = 20kW), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note Continuous . 1), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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