NTE2903 MOSFET Datasheet

NTE2903 Datasheet, PDF, Equivalent


Part Number

NTE2903

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2903 Datasheet


NTE2903
NTE2903
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
D
Features:
D Low DrainSource ON Resistance: RDS(ON) = 1.35Typ
D High Forward Transfer Admittance: |yfs| = 3.5S Typ
D Low Leakage Current: IDSS = 100A (VDS = 500V)
D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain
Current (Note
Continuous .
2),
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5A
Pulsed (t = 1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5mJ
Channel Temperature, TCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57C/W
Thermal Resistance, ChanneltoAmbient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. This transistor is an electrostaticsensitive device. Please handle with caution. Using con-
tinuously under heavy loads (e.g. the application of high temperature/current/voltage and
the significant change in temperature, etc.) may cause this product to decrease in the reliabil-
ity significantly even if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the “Absolute maximum Ratings”.
Note 2. Ensure that the channel temperature does not exceed +150C.
Note 3. VDD = 90V, TCH = +25C (initial), L = 12.2mH, IAR = 5A, RG = 25.
Note 4. Repetitive rating: pulse width limited by maximum channel temperature.
Rev. 914

NTE2903
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
GateSource Breakdown Voltage
Drain CutOff Current
DrainSource Breakdown Voltage
Gate Threshold Voltage
DrainSource ON Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GateSource Charge
GateDrain (“Miller”) Charge
IGSS
V(BR)GSS
IDSS
V(BR)DSS
VGS(th)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS = 25V, VDS = 0V
IG = 10A, VDS = 0V
VDS = 500V, VGS = 0V
ID = 10mA, VGS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 2.5A
VDS = 10V, ID = 2.5A
VGS = 0V, VDS = 25V, f = 1MHz
VDD ] 225V, VGS = 10V,
ID = 2.5A, RL = 90, Duty x 1%,
tw = 10s
ID = 5A, VDD ] 400V, VGS = 10V
Min Typ Max Unit
− − 10 A
30 − − V
− − 100 A
500 − − V
2.0 4.0 V
1.35 1.50
1.5 3.5
S
550 pF
70 pF
7 pF
20 ns
10 ns
50 ns
10 ns
16 nC
10 nC
6 nC
SourceDrain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Continuous Drain Reverse Current
Pulsed Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDR
IDRP
VDSF
trr
Qrr
Note 2
Note 2
IDR = 5A, VGS = 0V
IDR = 5A, VGS = 0V
dIDR/dt = 100A/s
−− 5
− − 20
− − −1.7
1400
9
Note 2. Ensure that the channel temperature does not exceed +150C.
Unit
A
A
V
ns
C


Features NTE2903 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Ty pe Package D Features: D Low Drain− Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance : |yfs| = 3.5S Typ D Low Leakage Curren t: IDSS = 100A (VDS = 500V) D Enhanc ement Mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID = 1mA) G S Absolute Maximum Rat ings: (TA = +25C unless otherwise sp ecified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 20k), V DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Vol tage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current (Note Cont inuous . 2), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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