NTE2902 MOSFET Datasheet

NTE2902 Datasheet, PDF, Equivalent


Part Number

NTE2902

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2902 Datasheet


NTE2902
NTE2902
N-Channel Silicon Junction
Field Effect Transistor
Description:
The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier
applications.
Absolute Maximum Ratings: (Note 1)
Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C
Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
ON Characteristics
V(BR)GSS IG = 1.0μA, VDS = 0
-25 -
-
IGSS VGS = 15V,
VDS = 0
TA = +25°C -
TA = +125°C -
- -1.0
- -1.0
VGS(off) VDS = 10V, ID = 1nA
-2.0 - -6.5
Zero-Gate Voltage Drain Current
Gate-Source Forward Voltage
IDSS VDS = 10V, VGS = 0, Note 2 24 - 60
VGS(f) VDS = 0, IG = 1mA
- - 1.0
Note 2. Pulse test: Pulse Width 300μs, Duty Cycle 3%.
Unit
V
nA
μA
V
mA
V

NTE2902
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Small-Signal Characteristics
Common- Source Input Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input Conductance
Common-Gate Forward
Transconductance
Re(yis)
Re(yos)
gos
Gpg
Re(yfs)
gfs
Re(yig)
gfg
VDS = 10V, f = 100MHz
ID = 10mA f = 100MHz
f = 1kHz
f = 100MHz
f = 100MHz
f = 1kHz
f = 100MHz
VDS = 10V, ID = 10mA,
f = 1kHz
- 0.5 - mmhos
- 0.25 - mmhos
- - 250 μmhos
- 16 -
dB
- 12 - mmhos
8000 - 18000 μmhos
- 12 - mmhos
- 150 - μmhos
Common-Gate Output Conductance gog
Gate-Drain Capacitance
Gate-Source Capacitance
Cgd VDS = 0, VGS = -10V,
Cgs f = 1MHz
Functional Characteristics
- 150 - μmhos
- 1.8 2.5 pF
- 4.3 5.0 pF
Equivalent Short-Circuit Input
Noise Voltage
en VDS = 10V, ID = 10mA,
f = 100Hz
- 10 - nV/Hz
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
GSD
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max


Features NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NT E2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolu te Maximum Ratings: (Note 1) Drain-Sour ce Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Tot al Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . .
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