NTE2906 MOSFET Datasheet

NTE2906 Datasheet, PDF, Equivalent


Part Number

NTE2906

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2906 Datasheet


NTE2906
NTE2906
MOSFET
NChannel, Enhancement Mode
High Speed Switch
(Compl to NTE2998)
TO3 Type Package
Features:
D High Speed Switching
D High Voltage
D High Energy Rating
D Enhancement Mode
D Integral Protection Diode
D
G
S
Absolute Maximum Ratings: (TC = +255C unless otherwise specified)
DrainSource Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +14V
Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.05C/W
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
DrainSource Breakdown Voltage
GateSource Breakdown Voltage
GateSource CutOff Voltage
DrainSource Saturation Voltage
DrainSource CutOff Current
Forward Transfer Admittance
BVDSX
BVGSS
VGS(OFF)
VDS(SAT)
IDSX
yfs
VGS = 10V, ID = 10mA
VDS = 0, IG = +100+A
VDS = 10V, ID = 100mA
VGD = 0, ID = 8A, Note 1
VGS = 10V, VDS = 200V
VDS = 10V, ID = 3A, Note 1
Note 1. Pulse Test: Pulse Width = 300+s, Duty Cycle 3 2%.
Min Typ Max Unit
200
+14
0.15
−−
−−
0.7
V
V
1.5 V
12 V
10 mA
2.0 S
Rev. 1013

NTE2906
Electrical Characteristics (Cont’d): (TC = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss
Coss
VDS = 10V, f = 1MHz
500
300
pF
pF
Reverse Transfer Capacitance
TurnOn Time
TurnOff Time
Crss
ton VDS = 20V, ID = 5A
toff
10
100
50
pF
ns
ns
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Drain
.215 (5.45)
.430
(10.92)
1.187 (30.16)
.665 (16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Gate
.525 (13.35) R Max
Source/Case


Features NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch (Compl to NTE299 8) TO3 Type Package Features: D High S peed Switching D High Voltage D High En ergy Rating D Enhancement Mode D Integr al Protection Diode D G S Absolute Ma ximum Ratings: (TC = +255C unless other wise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +14V Conti nuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Body Drain Diod e, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipati on (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.
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