NTE2908 MOSFET Datasheet

NTE2908 Datasheet, PDF, Equivalent


Part Number

NTE2908

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2908 Datasheet


NTE2908
NTE2908
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Description:
The NTE2908 is a Power MOSFET in a TO220 type package that utilizes advanced processing
techniques to achieve extremely low onresistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design provides an extremely efficient and reliable
device for use in a wide variety of applications.
D
Features:
D Ultra Low ONResistance
D Dynamic dv/dt Rating
D +175C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
G
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+25C . . . . . .
+100C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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202A
143A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 808A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5eC25),PCD
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. . 333W
2.2W/C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 620mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +175C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Starting TJ = +25C, L = 85H, RG = 25, IAS = 121A
Note 4. ISD 121A, di/dt 130A/s, VDD V(BR)DSS, TJ +175C
Rev. 615

NTE2908
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A
40 − − V
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
V(BR)DSS
TJ
RDS(on)
Reference to +25C, ID = 1mA
VGS = 10V, ID = 121A, Note 5
0.039 V/C
0.0035 0.004
Gate Threshold Voltage
VGS(th) VDS = 10V, ID = 250A
2.0 4.0 V
Forward Transconductance
gfs VDS = 25V, ID = 121A
76 − − S
DraintoSource Leakage Current
IDSS
VDS = 40V, VGS = 0V
− − 20 A
VDS = 32V, VGS = 0V, TJ = +150C
250 A
GatetoSource Forward Leakage
IGSS
VGS = 20V
− − 200 nA
GatetoSource Reverse Leakage
IGSS
VGS = 20V
− − −200 nA
Total Gate Charge
GatetoSource Charge
Qg ID = 121A, VDS = 32V, VGS = 10V, 131 196 nC
Qgs Note 5
36 nC
GatetoDrain (“Miller”) Charge
Qgd
37 56 nC
TurnOn Delay Time
Rise Time
td(on) VDD = 20V, ID = 121A, RG = 2.5, 17
tr RD = 0.2, Note 5
190
ns
ns
TurnOff Delay Time
td(off)
46 ns
Fall Time
tf
33 ns
Internal Drain Inductance
Internal Source Inductance
LD Between lead, .250in. (6.0) mm from 4.5 nH
LS package and center of die contact 7.5 nH
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
5669
1659
pF
pF
Reverse Transfer Capacitance
Crss
223 pF
Output Capacitance
Coss VGS = 0V, VDS = 1.0V, f = 1MHz
6205 pF
VGS = 0V, VDS = 32V, f = 1MHz
1467 pF
Effective Output Capacitance
Coss eff. VGS = 0V, VDS = 0V to 32V, Note 6 2249
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
IS Note 1
− − 202 A
Pulsed Source Current (Body Diode)
Diode Forward Voltage
ISM Note 2
VSD TJ = +25C, IS = 121A, VGS = 0V,
Note 5
− − 808 A
− − 1.5 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +25C, IF = 121A,
Qrr di/dt = 100A/s, Note 5
78 117 ns
163 245 C
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 5. Pulse width  00s; duty cycle 2%.
Note
6.
Cfroosms
eff. is a fixed capacitance
0 to 80% VDSS.
that
gives
the
same
charging
time
as
Coss
while
VDS
is
rising


Features NTE2908 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Pa ckage Description: The NTE2908 is a P ower MOSFET in a TO−220 type package that utilizes advanced processing tech niques to achieve extremely low on−re sistance per silicon area. This benefit , combined with the fast switching spe ed and ruggedized device design provide s an extremely efficient and reliable device for use in a wide variety of app lications. D Features: D Ultra Low ON −Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast S witching D Fully Avalanche Rated G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25C . . . . . . +100C . . . . . .(V. .G.S. .. ... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202A 143A Pulsed Drain Current (Note 2), IDM . .
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