NTE2909 MOSFET Datasheet

NTE2909 Datasheet, PDF, Equivalent


Part Number

NTE2909

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2909 Datasheet


NTE2909
NTE2909
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Description:
The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing
techniques to achieve extremely low onresistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design provides an extremely efficient and reliable
device for use in a wide variety of applications.
Features:
D Ultra Low ONResistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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57A
40A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . 200W
1.3W/5C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.8V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.755C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W
Note 1. Starting TJ = +255C, L = 0.70mH, RG = 25+ , IAS = 28A, VGS = 10V.
Note 2. ISD 3 28A, di/dt 3 380A/3s, VDD 3 V(BR)DSS, TJ 3 +1755C
Rev. 1013

NTE2909
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
V(BR)DSS VGS = 0V, ID = 2503A
100 − − V
V(BR)DSS
TJ
RDS(on)
Reference to +255C, ID = 1mA
VGS = 10V, ID = 28A, Note 3
0.13 V/5C
− − 23 m+
VGS(th) VDS = VGS, ID = 2503A
2.0 4.0 V
gfs VDS = 25V, ID = 280A, Note 3
32 − − S
IDSS
VDS = 100V, VGS = 0V
− − 25 3A
VDS = 80V, VGS = 0V, TJ = +1505C − − 250 3A
IGSS
VGS = 20V
− − 100 nA
IGSS
VGS = 20V
− − −100 nA
Qg ID = 28A, VDS = 80V, VGS = 10V
− − 130 nC
Qgs − − 26 nC
Qgd − − 43 nC
td(on)
tr
VDD = 50V, ID = 28A, RG = 2.5+ ,
VGS = 10V, Note 3
12 ns
58 ns
td(off)
45 ns
tf 45 ns
LD Between lead, .250in. (6.0) mm from 4.5 nH
LS package and center of die contact 7.5 nH
Ciss VGS = 0V, VDS = 25V, f = 1MHz
3130 pF
Coss
410 pF
Crss 72 pF
EAS IAS = 28A, L = 0.70mH, Note 1
1060 280 mJ
Note 4 Note 5
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 6
VSD TJ = +255C, IS = 28A, VGS = 0V,
Note 3
− − 57 A
− − 230 A
− − 1.2 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +255C, IF = 28A,
Qrr di/dt = 100A/3s, Note 3
140 220 ns
670 1010 3C
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Starting TJ = +255C, L = 0.70mH, RG = 25+ , IAS = 28A, VGS = 10V.
Note 2. ISD 3 28A, di/dt 3 380A/3s, VDD 3 V(BR)DSS, TJ 3 +1755C
Note 3. Pulse width 3 4003s; duty cycle 3 2%.
Note 4. This is a typical value at device destruction and represents operation outside rated limits.
Note 5. This is a calculated value limited to TJ = +1755C.
Note 6. Repetitive rating: pulse width limited by max. junction temperature.


Features NTE2909 MOSFET N−Channel, Enhancement Mode High Speed Switch Description: Th e NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced pro cessing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast sw itching speed and ruggedized device des ign provides an extremely efficient and reliable device for use in a wide vari ety of applications. Features: D Ultra Low ON−Resistance D Dynamic dv/dt Ra ting D +1755C Operating Temperature D F ast Switching D Fully Avalanche Rated D G S Absolute Maximum Ratings: Cont inuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S . ..... = .. .. 10V), ..... ..... .I D. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57A 40A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . .
Keywords NTE2909, datasheet, pdf, NTE, N-Channel, MOSFET, TE2909, E2909, 2909, NTE290, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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