NTE2918 MOSFET Datasheet

NTE2918 Datasheet, PDF, Equivalent


Part Number

NTE2918

Description

P-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2918 Datasheet


NTE2918
NTE2918
MOSFET
PCh, Enhancement Mode
High Speed Switch
TO220 Type Package
D
Features:
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
G
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
......
......
.ID. .
...
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31A
22A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . . 110W
0.71W/5C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.45C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 25V, starting TJ = +255C, L = 2.1mH, RG = 25+ , IAS = 16A
Note 3. ISD 3 16A, di/dt 3 280A/3s, VDD 3 55V, TJ 3 +1755C
Note 4. Pules Width 3 3003s, Duty Cycle 3 2%.

NTE2918
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
V(BR)DSS
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
VGS = 0V, ID = 2503A
Reference to +255C, ID = 1mA
VGS = 10V, ID = 16A, Note 4
VDS = VGS, ID = 2503A
VDS = 25V, ID = 16A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = +1255C
VGS = 20V
VGS = 20V
ID = 16A, VDS = 44V, VGS = 10V,
Note 4
VDD = 28V, ID = 16A, RG = 6.8+ ,
RD = 1.6+ , Note 4
Between lead, .250in. (6.0) mm from
package and center of die contact
VGS = 0V, VDS = 25V, f = 1MHz
55
2.0
8.0
-0.034
14
66
39
63
4.5
7.5
1200
520
250
0.06
4.0
25
250
100
100
63
13
29
V
V/5C
+
V
mhos
3A
3A
nA
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
pF
pF
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
IS
Pulsed Source Current (Body Diode)
ISM Note 1
Diode Forward Voltage
VSD TJ = +255C, IS = 16A, VGS = 0V,
Note 4
Min Typ Max Unit
− − −31 A
− − −110 A
− − −1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +255C, IF = 16A,
Qrr di/dt = 100A/3s, Note 4
71 110 ns
170 250 nC
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 3 3003s; duty cycle 3 2%.


Features NTE2918 MOSFET P−Ch, Enhancement Mode High Speed Switch TO220 Type Package D Features: D Dynamic dv/dt Rating D +1 755C Operating Temperature D Fast Switc hing D Fully Avalanche Rated G S Abso lute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = . . .. −10V), ...... ...... .ID. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −31A −22A P ulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −110A Power DDeisrsa itpeaLtiionnea(TrlCy A=b+o2v5e5C25),5P CD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords NTE2918, datasheet, pdf, NTE, P-Channel, MOSFET, TE2918, E2918, 2918, NTE291, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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