Document
NTE2918 MOSFET P−Ch, Enhancement Mode High Speed Switch TO220 Type Package
D
Features: D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated
G S
Absolute Maximum Ratings:
Continuous
TTCC
= =
Drain Current +255C . . . . . . +1005C . . . . .
.(V. .G.S. .....
= .. ..
−10V), ...... ......
.ID. . ...
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
−31A −22A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −110A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
.
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. . . 110W 0.71W/5C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −16A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.45C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. VDD = −25V, starting TJ = +255C, L = 2.1mH, RG = 25+ , IAS = −16A Note 3. ISD 3 −16A, di/dt 3 −280A/3s, VDD 3 −55V, TJ 3 +1755C Note 4. Pules Width 3 3003s, Duty Cycle 3 2%.
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain−to−Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage Gate−to−Source Reverse Leakage Total Gate Charge Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
V(BR)DSS V(BR)DSS
TJ RDS(on) VGS(th)
gfs IDSS
IGSS IGSS Qg Qgs Qgd td(on)
tr td(off)
tf LD LS Ciss Coss Crss
VGS = 0V, ID = −2503A Reference to +255C, ID = −1mA
VGS = −10V, ID = −16A, Note 4 VDS = VGS, ID = −2503A VDS = −25V, ID = −16A VDS = −55V, VGS = 0V VDS = −44V, VGS = 0V, TJ = +1255C VGS = 20V VGS = −20V ID = −16A, VDS = −44V, VGS = −10V, Note 4
VDD = −28V, ID = −16A, RG = 6.8+ , RD = 1.6+ , Note 4
Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = −25V, f = 1MHz
−55 −
− −2.0 8.0
− − − − − − − − − − − − − − − −
−
-0.034
− − − − − − − − − − 14 66 39 63 4.5 7.5 1200 520 250
− −
0.06 −4.0
− −25 −250 100 −100 63 13 29
− − − − − − − − −
V V/5C
+ V mhos 3A 3A nA nA nC nC nC ns ns ns ns nH nH pF pF pF
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
IS
Pulsed Source Current (Body Diode)
ISM Note 1
Diode Forward Voltage
VSD TJ = +255C, IS = −16A, VGS = 0V, Note 4
Min Typ Max Unit − − −31 A − − −110 A − − −1.3 V
Reverse Recovery Time Reverse Recovery Charge
trr TJ = +255C, IF = −16A, Qrr di/dt = −100A/3s, Note 4
− 71 110 ns − 170 250 nC
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 3 3003s; duty cycle 3 2%.
.420 (10.67) Max
.147 (3.75) D.