NTE2917 MOSFET Datasheet

NTE2917 Datasheet, PDF, Equivalent


Part Number

NTE2917

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE2917 Datasheet


NTE2917
NTE2917
MOSFET
Silicon NChannel JFET Transistor
w/Internal Diode for ECM Impedance
Converter Applications
TO92S Type Package
D
Features:
D Compact Package
D High Forward Transfer Admittance
D Low Capacitance
D Includes Diode and High Resistance at G S
G
S
Absolute Maximum Ratings:
DraintoSource Voltage (VGS = 1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
GatetoDrain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1255C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Zero Gate Voltage Drain Cutoff Current
Gate Cutoff Voltage
Forward Transfer Admittance
IDSS
VGS(off)
|yfs|
VDS = 5V, VGS = 0V
VGS = 5V, ID = 1.0mA
VDS = 5V, ID = 30mA, f = 1kHz
VDS = 5V, VGS = 0V, f = 1kHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Noise Voltage
Ciss
Coss
Crss
NV
VGS = 0V, VDS = 5V, f = 1MHz
Min Typ Max
60 500
− − −1.0
150
150 1200
4.5 6.0
1.5 3.0
1.2 3.0
1.0 3.0
Unit
mA
V
ms
ms
pF
pF
pF
mV

NTE2917
.157 (4.0)
.118
(3.0)
.063
(1.6)
.492
(12.5)
Min
DGS
.050 (1.27)
.050 (1.27)
.053 (1.35)
.079
(2.0)


Features NTE2917 MOSFET Silicon N−Channel JFET Transistor w/Internal Diode for ECM Imp edance Converter Applications TO92S Typ e Package D Features: D Compact Packa ge D High Forward Transfer Admittance D Low Capacitance D Includes Diode and H igh Resistance at G − S G S Absolut e Maximum Ratings: Drain−to−Source Voltage (VGS = −1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V G ate−to−Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20V Drain Cu rrent, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Gate Curren t, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Power D issipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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