NTE2917

NTE2917 MOSFET Silicon N−Channel JFET Transistor w/Internal Diode for ECM Impedance Converter Applications TO92S Type Package D Features: D Compact Package D High Forward Transfer Admittance D Low Capacitance D Includes Diode and High Resistance at G − S G S Absolute Maximum Ratings: Drain−to−Source Voltage (VGS = −1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate−to−Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1255C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Zero Gate Voltage Drain Cutoff Current Gate Cutoff Voltage Forward Transfer Admittance IDSS VGS(off) |yfs| VDS = 5...