NTE2916 MOSFET Datasheet

NTE2916 Datasheet, PDF, Equivalent


Part Number

NTE2916

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2916 Datasheet


NTE2916
NTE2916
MOSFET
NCh, Enhancement Mode
High Speed Switch
TO247 Type Package
Features:
D
D Advanced Process Technology
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
G
D Ease of Paralleling
Description:
S
The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low
onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design provides the designer with an extremely efficient and reliable device for use in a wide
variety of applications.
The TO247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO220 devices. Th TO247 is similar, but superior, to the TO218 package because
of its isolated mounting hole.
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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50A
35A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A
Power
DDeisrsaitpeaLtiionnea(TrlCy
A=b+o2v5e5C25),5PCD
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. . 300W
2.0W/5C
GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +3005C
Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.505C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 405C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.245C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. Starting TJ = +255C, L = 1.5mH, RG = 25W, IAS = 28A
Note 3. ISD 3 28A, di/dt 3 486A/ms, VDD 3 V(BR)DSS, TJ 3 +1755C
Rev. 1013

NTE2916
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS VGS = 0V, ID = 250+A
200 − − V
V(BR)DSS
TJ
RDS(on)
Reference to +255C, ID = 1mA
VGS = 10V, ID = 28A, Note 4
0.26 V/5C
− − 0.04 W
VGS(th) VDS = VGS, ID = 250mA
2.0 4.0 V
gfs VDS = 50V, ID = 28A
27
mhos
IDSS VDS = 200V, VGS = 0V
− − 25 mA
VDS = 160V, VGS = 0V, TJ = +1505C
250 mA
IGSS
VGS = 20V
− − 100 nA
IGSS
VGS = 20V
− − −100 nA
Qg ID = 28A, VDS = 160V, VGS = 10V, − − 234 nC
Qgs Note 4
− − 38 nC
Qgd − − 110 nC
td(on) VDD = 100V, ID = 28A, RG = 1.8W, 17 ns
tr VGS = 10V, Note 4
60 ns
td(off)
55 ns
tf 48 ns
LD Between lead, .250in. (6.0) mm from 5.0 nH
LS package and center of die contact 13 nH
Ciss VGS = 0V, VDS = 25V, f = 1MHz
4057 pF
Coss
603 pF
Crss 161 pF
Note 4. Pulse width 3 400ms; duty cycle 3 2%.
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS Note 5
ISM Note 1
VSD TJ = +255C, IS = 28A, VGS = 0V,
Note 4
− − 50 A
− − 200 A
− − 1.3 V
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
trr TJ = +255C, IF = 28A,
Qrr di/dt = 100A/ms, Note 4
268 402 ns
1.9 2.8 mC
ton Intrinsic turnon time is negligible (turnon is dominated by LS + LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 3 400ms; duty cycle 3 2%.
Note 5. Calculated continuous current based on maximum allowable junction temperature.


Features NTE2916 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package F eatures: D D Advanced Process Technol ogy D Dynamic dv/dt Rating D +1755C O perating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of P aralleling Description: S The NTE2916 Power MOSFET utilizes advanced process ing techniques to achieve extremely low on−resistance per silicon area. Thi s benefit, combined with the fast switc hing speed and ruggedized device desig n provides the designer with an extreme ly efficient and reliable device for us e in a wide variety of applications. The TO247 package is preferred for comm ercial−industrial applications where higher power levels preclude the use of TO220 devices. Th TO247 is similar, bu t superior, to the TO218 package becaus e of its isolated mounting hole. Absol ute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . + 1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . ..
Keywords NTE2916, datasheet, pdf, NTE, N-Channel, MOSFET, TE2916, E2916, 2916, NTE291, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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