NTE2916

NTE2916 MOSFET N−Ch, Enhancement Mode High Speed Switch TO247 Type Package Features: D D Advanced Process Technology D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated G D Ease of Paralleling Description: S The NTE2916 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO247 package is preferred for commercial−industrial applications where higher power levels preclude the use of TO220 devices. Th TO247 is similar, but superior, to the TO218 package because of its isolated mounting hole. Absolute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A 35A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power DDeisrsaitpeaLtiionnea(TrlCy A=b+o2v5e5C25),5PCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...