NTE2915 MOSFET Datasheet

NTE2915 Datasheet, PDF, Equivalent


Part Number

NTE2915

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2915 Datasheet


NTE2915
NTE2915
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Low GatetoDrain Charge to Reduce Switching Losses
D
Fully Characterized
to Simplify Design
Capacitance
Including
Effective
COSS
D Fully Characterized Avalanche Voltage and Current
Applications:
D High Frequency DCDC Converters
D
G
S
Absolute Maximum Ratings:
Continuous
TTCC
=
=
Drain Current
+255C . . . . . .
+1005C . . . . .
.(V. .G.S.
.....
=
..
..
10V),
.....
.....
.ID. .
...
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31A
21A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124A
Power
LDinisesaipraDtieornat(iTnCg
= +255C),
Factor . .
.P.D.
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. . 200W
1.3W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.9V/ns
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Lead Temperature (During Soldering, 1.6mm from Case, 10 sec max.), TL . . . . . . . . . . . . . . +3005C
Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.755C/W
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.55C/W
Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Note 1. Repetitive rating: pulse width limited by maximum channel temperature.
Note 2. ISD 3 18A, di/dt 3 110A/s, VDD 3 V(BR)DSS, TJ +1755C.
Note 3. Starting TJ = +255C, L = 3.8mH, RG = 25W, IAS = 18A.
Rev. 1013

NTE2915
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
DraintoSource Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
DrainSource Leakage Current
GateSource Leakage Current
Dynamic Characteristics
V(BR)DSS
+V(BR)DSS/+TJ
RDS(on)
VGS(th)
IDSS
IGSS
VGS = 0V, ID = 250mA
Reference to +255C, ID = 1mA
VGS = 10V, ID = 18A, Note 4
VDS = VGS, ID = 250mA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = +1505C
VGS = +30V
200
V
0.25 V/5C
− − 0.082 W
3.0
5.5 V
− − 25 mA
− − 250 mA
− − +100 nA
Forward Transconductance
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
gfs VDS = 50V, ID = 18A
Qg ID = 18A, VDS = 160V,
Qgs VGS = 10V, Note 4
Qgd
17
S
70 110 nC
18 27 nC
33 49 nC
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
td(on)
tr
VDD = 100V, ID = 18A,
RG = 2.5W, RD = 4.5W, Note 4
16
38
td(off)
26
tf 10
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
2370
Coss
390
Crss 78
Coss
VGS = 0V, VDS = 1V, f = 1MHz
2860
VGS = 0V, VDS = 160V, f = 1MHz 150
Coss eff.
VGS = 0V, VDS = 0V to 160V,
Note 5
170
ns
ns
ns
ns
pF
pF
pF
pF
pF
pF
Note 4. Pulse width 3 300ms; duty cycle 3 2%.
Note
5.
CfroOmSS0etffo.
is a fixed capacitance
80% VDSS.
that
gives
the
same
charging
time
as
COSS
while
VDS
is
rising
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS − − 31 A
ISM Note 1
− − 124 A
VSD IS = 18A, VGS = 0V, TJ = +255C, Note 4
1.3 V
trr TJ = +255C, IF = 18A,
Qrr di/dt = 100A/ms, Note 4
200 300 ns
1.7 2.6 mC
ton Intrinsic turnon time is negligible (turnon is dominated by LS + LD)
Note 1. Repetitive rating: pulse width limited by maximum channel temperature.
Note 4. Pulse width 3 300ms; duty cycle 3 2%.


Features NTE2915 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Packa ge Features: D Low Gate−to−Drain Charge to Reduce Switching Losses D F ully Characterized to Simplify Design Capacitance Including Effective COSS D Fully Characterized Avalanche Volta ge and Current Applications: D High Fr equency DC−DC Converters D G S Abso lute Maximum Ratings: Continuous TTCC = = Drain Current +255C . . . . . . +1005C . . . . . .(V. .G.S. ..... = . . .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A 21A Pu lsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124A Power LDinisesai praDtieornat(iTnCg = +255C), Factor . . .P.D. . . . . . . . . . . . . . . . . . . . . . . . . ..
Keywords NTE2915, datasheet, pdf, NTE, N-Channel, MOSFET, TE2915, E2915, 2915, NTE291, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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