N-Channel MOSFET. NTE2912 Datasheet


NTE2912 MOSFET. Datasheet pdf. Equivalent


NTE2912


N-Channel MOSFET
NTE2912 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package

Features: D Advanced Process technology D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast Switching D Fully Avalanche Rated

G

D S

Description: The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO220 package is universally preferred for all commercial−industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings:

Continuous

TTCC

= =

+D2ra5i5nCC(uNroretent1()V.G.S. +1005C . . . . . . . . . .

= .. ..

10V), ..... .....

.ID. . ...

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

. .

82A 58A

Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A

Power

LDinisesaipraDtieornat(iT...



NTE2912
NTE2912
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Advanced Process technology
D Ultra Low ONResistance
D Dynamic dv/dt Rating
D +1755C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
G
D
S
Description:
The NTE2912 Power MOSFET utilizes advanced processing techniques to achieve extremely low
onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized
device design provides the designer with an extremely efficient and reliable device for use in a wide
variety of applications.
The TO220 package is universally preferred for all commercialindustrial applications at power dis-
sipation levels to approximately 50 watts. The low thermal resistance and low package cost of the
TO220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings:
Continuous
TTCC
=
=
+D2ra5i5nCC(uNroretent1()V.G.S.
+1005C . . . . . . . . . .
=
..
..
10V),
.....
.....
.ID. .
...
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
82A
58A
Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Power
LDinisesaipraDtieornat(iTnCg
= +255C),
Factor . .
.P.D.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . 230W
1.5W/5C
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23mJ
Peak Diode Recovery dv/dt (Note 3, dv/dt, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.9V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1755C
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating: pulse width limited by maximum channel temperature.
Note 3. ISD 3 43A, di/dt 3 300A/s, VDD 3 V(BR)DSS, TJ +1755C.
Rev. 1013

NTE2912
Absolute Maximum Ratings (Cont’d):
Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . +3005C
Maximum Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.655C/W
Typical Thermal Resistance, CasetoSink (Flat, greased surface), RthCS . . . . . . . . . . . . . 0.55C/W
Maximum Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 625C/W
Electrical Characteristics: (TJ = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0V, ID = 2505 A
75
V
Breakdown Voltage Temperature Coefficient +V(BR)DSS/+TJ Reference to +255C, ID = 1mA
0.074 V/5C
Static Drain-to-Source On-Resistance
RDS(on) VGS = 10V, ID = 43A, Note 5
− − 13 m3
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 2505 A
2.0
4.0 V
Forward Transconductance
gfs VDS = 50V, ID = 43A, Note 5
38
S
DrainSource Leakage Current
IDSS
VDS = 75V, VGS = 0V
− − 25 5 A
VDS = 60V, VGS = 0V, TJ = +1505C
− − 250 5 A
GateSource Leakage Current
IGSS
VGS = +20V
− − +100 nA
Total Gate Charge
Qg ID = 43A, VDS = 60V, VGS = 10V − − 160 nC
GatetoSource Charge
Qgs
− − 29 nC
GatetoDrain (“Miller”) Charge
Qgd
− − 55 nC
TurnOn Delay Time
Rise Time
td(on)
VDD = 38V, ID = 43A, RG = 2.53 ,
13
ns
tr VGS = 10V, Note 5
64 ns
TurnOff Delay Time
td(off)
49 ns
Fall Time
tf
48 ns
Internal Drain Inductance
Internal Source Inductance
LD Between lead, .250 (6mm) from 4.5 nH
LS
package and center of die contact
7.5
nH
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
3820
pF
Output Capacitance
Coss
610 pF
Reverse Transfer Capacitance
Crss
130 pF
Single Pulse Avalanche Energy (Note 4)
EAS IAS = 50A, L = 3705 H
1280 340 mJ
(Note 6) (Note 7)
Note 2. Repetitive rating: pulse width limited by maximum channel temperature.
Note 4. Starting TJ = +255C, L = 3705 H, RG = 253 , IAS = 43A, VGS = 10V.
Note 5. Pulse width 3 4005 s; duty cycle 3 2%.
Note 6. This is a typical value at device destruction and represents operation outside rated limits.
Note 7. This is a calculated value limited to TJ = +1755C.
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
IS Note 1
− − 82 A
Pulsed Source Current (Body Diode)
ISM Note 2
− − 280 A
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS = 43A, VGS = 0V, TJ = +255C, Note 5
trr TJ = +255C, IF = 43A,
Qrr di/dt = 100A/5 s, Note 5
− − 1.2 V
100 150 ns
410 610 5 C
Forward TurnOn Time
ton Intrinsic turnon time is negligible (turnon is dominated by LS + LD)
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive rating: pulse width limited by maximum channel temperature.
Note 5. Pulse width 3 4005 s; duty cycle 3 2%.




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)