NTE2911 MOSFET Datasheet

NTE2911 Datasheet, PDF, Equivalent


Part Number

NTE2911

Description

N-Channel MOSFET

Manufacture

NTE

Total Page 3 Pages
Datasheet
Download NTE2911 Datasheet


NTE2911
NTE2911
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO220 Full Pack Type Package
D
Features:
D Low DrainSource ONResistance
D High Forward Transfer Admittance
D Low Leakage Current
D Enhancement Mode
G
S
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
DrainSource Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
DrainGate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain
Current (Note
Continuous .
2),
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12A
Pulse (t = 1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mJ
Channel Temperature Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, Rth(chc) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125C/W
Thermal Resistance, ChanneltoAmbient, Rth(cha) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/cur-
rent/voltage, etc.) are within the Absolute Maximum Ratings.
Note 2. Ensure that the channel temperature does not exceed +150C.
Note 3. VDD = 90V, Tch = +25C (Initial), L = 4.3mH, IAR = 12A, RG = 25.
Note 4. Repetitive rating: pulse width limited by maximum channel temperature.
Rev. 914

NTE2911
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
GatetoSource Breakdown Voltage
Drain CutOff Current
DraintoSource Breakdown Voltage
Gate Threshold Voltage
DraintoSource OnResistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Time
Rise Time
TurnOff Time
Fall Time
Total Gate Charge
GatetoSource Charge
GatetoDrain (“Miller”) Charge
IGSS
V(BR)GSS
IDSS
V(BR)DSS
VGS(th)
RDS(on)
|yfs|
Ciss
Coss
Crss
ton
tr
toff
tf
Qg
Qgs
Qgd
VGS = 25V, VDS = 0V
VDS = 0V, IG = 10A
VDS = 500V, VGS = 0V
VGS = 0V, ID = 10mA
VDS = 10V, ID = 1mA
VGS = 10V, ID = 6A
VDS = 10V, ID = 6A
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 200V, ID = 6A, RL = 33,
VGS = 10V, Duty 1%, tw = 10s
ID = 12A, VDD = 400V, VGS = 10V
Min Typ Max
− − 10
30
− − 100
500
2.0 4.0
0.4 0.52
3.5 8.5
1500
180
15
50
22
170
36
42
23
19
Unit
A
V
A
V
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
SourceDrain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Continuous Drain Reverse Current
Pulse Drain Reverse Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IDR
IDRP
VDSF
trr
Qrr
Note 2
Note 2
IDR = 12A, VGS = 0V
IDR = 12A, VGS = 0V,
dIDR/dt = 100A/s
− − 12
− − 48
− − −1.7
1200
16
Note 2. Ensure that the channel temperature does not exceed +150C.
Unit
A
A
V
ns
C
D
G
S


Features NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pa ck Type Package D Features: D Low Dra in−Source ON−Resistance D High Forw ard Transfer Admittance D Low Leakage C urrent D Enhancement Mode G S Absolut e Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain− Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Volt age (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 0V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drai n Current (Note Continuous . 2), ... I.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulse (t = 1ms) . . . . . . . . . . . . . . . ..
Keywords NTE2911, datasheet, pdf, NTE, N-Channel, MOSFET, TE2911, E2911, 2911, NTE291, NTE29, NTE2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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