N-Channel MOSFET. NTE2951 Datasheet

NTE2951 MOSFET. Datasheet pdf. Equivalent

Part NTE2951
Description N-Channel MOSFET
Feature NTE2951 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−247 Type Package Features: D High S.
Manufacture NTE
Datasheet
Download NTE2951 Datasheet

NTE2951 MOSFET N−Channel, Enhancement Mode High Speed Switch NTE2951 Datasheet
Recommendation Recommendation Datasheet NTE2951 Datasheet





NTE2951
NTE2951
MOSFET
NChannel, Enhancement Mode
High Speed Switch
TO247 Type Package
Features:
D High Speed Switching
D No Secondary Breakdown
D AvalancheProof
D Low ONResistance
D Low Driving Power
Applications
D Switching Regulators
D UPS (Uninterruptible Power Supply)
D DCDC Converters
D
G
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
DrainSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
DrainSource Voltage (VGS = 30V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43A
Pulsed Drain Current, ID(pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172A
GateSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
NonRepetitive Maximum Avalanche Current (Tch = +25C), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . 43A
Repetitive or Maximum Avalanche Current (Tch +150C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . 21.5A
NonRepetitive Maximum Avalanche Energy (VCC = 60V, L = 802H), EAS . . . . . . . . . . . . 808.9mJ
Maximum DrainSource dV/dt (VDS 600V), dVDS/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20kV/s
Peak Diode Recovery dV/dt (Note 1), dV/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5kV/s
Maximum Power Dissipation,
TTAC
=
=
+25C
+25C
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. 2.5W
600W
Operating Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, ChanneltoCase, Rth(chc) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.208C/W
Thermal Resistance, ChanneltoAmbient, Rth(cha) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W
Note 1. IF ID, di/dt = 50A/s, VCC V(BR)DSS, Tch +150C.



NTE2951
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DraintoSource Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
V+2D5S°C= 600V, VGS = 0V, Tch =
V+1D2S5=°C480V, VGS = 0V, Tch =
GateSource Leakage Current
Static DrainSource OnResistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Total Gate Charge
GateSource Charge
GateDrain (“Miller”) Charge
Avalanche Capability
Diode Forward ON Voltage
Reverse Recovery Time
Reverse Recovery Charge
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IAV
VSD
trr
Qrr
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 26A
VDS = 25V, ID = 21.5A
VGS = 0V, VDS = 25V, f = 1MHz
VRCGCS
=
=
31000WV,,VIDGS==211.05VA,
VVCGCS
=
=
300V,
10V
ID
=
43A,
L = 802mH, Tch = +25°C
IF = 43A, VGS = 0V, Tch = +25°C
IFd=i/d4t 3=A1,0V0GAS/m=s,0TVc,h = +25°C
Min Typ Max
600
3.0 5.0
− − 25
− − 250
10 100
0.12 0.16
15 30
5360 8040
680 1020
40 60
80 120
87 131
190 285
44 66
112 168
34 51
40 60
43
1.0 1.5
0.98
22
Unit
V
V
mA
mA
nA
W
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
ms
mC





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