NTE294 Transistors Datasheet

NTE294 Datasheet, PDF, Equivalent


Part Number

NTE294

Description

Silicon Complementary Transistors

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download NTE294 Datasheet


NTE294
NTE293 (NPN) & NTE294 (PNP)
Silicon Complementary Transistors
Audio Amplifier and Driver
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 2mA, IB = 0
V(BR)EBO IE = 10µA, IC = 0
ICBO VCB = 20V, IE = 0
hFE VCE = 10V, IC = 500mA, Note 2
VCE = 5V, IB = 1A, Note 2
VCE(sat) IC = 500mA, IB = 50mA, Note 2
60 –
50 –
5––
– – 0.1
120 – 240
50 100 –
– 0.2 0.4
V
V
V
µA
V
Base–Emitter Saturation Voltage
VBE(sat) IC = 500mA, IB = 50mA, Note 2
– 0.85 1.2 V
Current–Gain Bandwidth Product
Collector Output Capacitance
fT VCB = 10V, IE = 50mA, f = 200MHz – 200 – MHz
Cob VCB = 10V, Ie = 0, f = 1MHz
– 11 20 pF
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 2. Pulse measurement.

NTE294
.339
(8.62)
Max
.512
(13.0)
Min
Seating Plane
.026 (.66)
Dia Max
ECB
.100 (2.54)
.240 (6.09) Max
.200
(5.08)
Max


Features NTE293 (NPN) & NTE294 (PNP) Silicon Comp lementary Transistors Audio Amplifier a nd Driver Description: The NTE293 (NPN ) and NTE294 (PNP) are silicon compleme ntary transistors in a Giant TO92 type package designed for use in low–frequ ency power amplification and drive appl ications. Features: D Low Collector– Emitter Saturation Voltage Absolute Ma ximum Ratings: (TA = +25°C unless othe rwise specified) Collector–Base Volta ge, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emit ter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Cu rrent, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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