EM1C DIODES Datasheet

EM1C Datasheet, PDF, Equivalent


Part Number

EM1C

Description

SILICON RECTIFIER DIODES

Manufacture

EIC

Total Page 2 Pages
Datasheet
Download EM1C Datasheet


EM1C
www.eicsemi.com
EM1B ~ EM1C
PRV : 800 ~ 1000 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current
(50 Hz, Half-cycle, Sine Wave, Single Shot)
Maximum Forward Voltage at IF = 1.0 A
Maximum Reverse Current at Reverse Voltage Ta = 25 °C
Maximum Reverse Current at Reverse Voltage Ta = 100 °C
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRM
VRSM
VR
IF(AV)
IFSM
VF
IR
IR(H)
TJ
TSTG
EM1B
EM1C
800 1000
850 1050
800 1000
1.0
35
0.97
20
100
- 40 to + 150
- 40 to + 150
UNIT
V
V
V
A
A
V
µA
µA
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005

EM1C
www.eicsemi.com
TH97/2478
TH09/2479
RATING AND CHARACTERISTIC CURVES ( EM1B ~ EM1C )
IATF 0113686
SGS TH07/1033
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1..0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
Ta = 25 °C
40
30
20
10
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 50Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
30
10
1.0
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE, VOLTS
0.1
Ta = 25 °C
0.01
0 20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005


Features www.eicsemi.com EM1B ~ EM1C PRV : 800 ~ 1000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge c urrent capability * High reliability * Low reverse current * Low forward volta ge drop * Pb / RoHS Free MECHANICAL DAT A : * Case : DO-41 Molded plastic * Epo xy : UL94V-O rate flame retardant * Lea d : Axial lead solderable per MIL-STD-2 02, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounti ng position : Any * Weight : 0.339 gram TH97/2478 TH09/2479 IATF 0113686 SG S TH07/1033 SILICON RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0 .205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. Dimensions in inches and ( millimeter s ) MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS Rating at 25 °C ambient t emperature unless otherwise specified. Single phase, half wave, 60 Hz, resisti ve or inductive load. For capacitive lo ad, derate current by 20%. RATING Maxi mum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maxi.
Keywords EM1C, datasheet, pdf, EIC, SILICON, RECTIFIER, DIODES, M1C, 1C, C, EM1, EM, E, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)