BTD2150K3 Transistor Datasheet

BTD2150K3 Datasheet, PDF, Equivalent


Part Number

BTD2150K3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD2150K3 Datasheet


BTD2150K3
CYStech Electronics Corp.
Spec. No. : C848K3
Issued Date : 2018.08.23
Revised Date :
Page No. : 1/7
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150K3
BVCEO
IC
RCE(SAT) typ.
50V
4A
100mΩ
Features
Low VCE(sat), VCE(sat)=0.14 V (typical), at IC / IB = 1A / 10mA
Excellent current gain characteristics
Complementary to BTB1424K3
Pb-free lead plating package
Symbol
BTD2150K3
Outline
TO-92L
BBase
CCollector
EEmitter
Ordering Information
Device
BTD2150K3-0-TB-G
BTD2150K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD2150K3
CYStek Product Specification

BTD2150K3
CYStech Electronics Corp.
Spec. No. : C848K3
Issued Date : 2018.08.23
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
(Note 1)
Base Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
Limits
80
50
6
4
7
0.8
0.9
-55~+150
-55~+150
Unit
V
V
V
A
A
A
W
C
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
80
50
6
-
-
-
-
-
0.8
250
270
200
-
-
Typ.
-
-
-
-
-
0.14
0.2
0.1
1
-
-
-
90
45
Max.
-
-
-
0.1
0.1
0.25
0.4
0.2
1.5
-
560
-
-
-
Unit
V
V
V
μA
μA
V
V
Ω
V
-
-
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=1A, IB=10mA
IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f =100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD2150K3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 848K3 Issued Date : 2018.08.23 Revised Date : Page No. : 1/7 Low Vcesat NPN E pitaxial Planar Transistor BTD2150K3 B VCEO IC RCE(SAT) typ. 50V 4A 100mΩ F eatures  Low VCE(sat), VCE(sat)=0.14 V (typical), at IC / IB = 1A / 10mA Excellent current gain characteristic s  Complementary to BTB1424K3  Pb -free lead plating package Symbol BTD2 150K3 Outline TO-92L B:Base C:Co llector E:Emitter Ordering Informati on Device BTD2150K3-0-TB-G BTD2150K3-0 -BM-G Package TO-92L (Pb-free lead pla ting and halogen-free package) TO-92L ( Pb-free lead plating and halogen-free p ackage) Shipping 2000 pcs / tape & box 500 pcs / bag, 10 bags/box, 10 boxes/c arton Environment friendly grade : S f or RoHS compliant products, G for RoHS compliant and green compound products P acking spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 bo xes/carton Product rank, zero for no ra nk products Product name BTD2150K3 CYStek Product Specification CYStech Ele.
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