BTD2195SM3 Transistor Datasheet

BTD2195SM3 Datasheet, PDF, Equivalent


Part Number

BTD2195SM3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD2195SM3 Datasheet


BTD2195SM3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2195SM3
Spec. No. : C654M3
Issued Date : 2016.12.01
Revised Date :
Page No. : 1/8
Description
The BTD2195SM3 is designed for use in general purpose amplifier and low speed switching application.
Pb-free lead plating package process is adopted.
Equivalent Circuit
BTD2195SM3
B
C
Outline
SOT-89
R15K R2120 E
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
Package
BTD2195SM3-0-T2-G
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD2195SM3
CYStek Product Specification

BTD2195SM3
CYStech Electronics Corp.
Spec. No. : C654M3
Issued Date : 2016.12.01
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Power Dissipation
PD
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. Single Pulse Pw350μs, Duty2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
4. When mounted on a FR-4 PCB with area measuring 30×30×1 mm.
Limits
150
150
5
4
6 (Note 1)
208
125 (Note 2)
62.5 (Note 3)
85 (Note 4)
43
0.7
1.2 (Note 2)
2.5 (Note 3)
3.5
-55~+175
-55~+175
Unit
V
A
°C/W
W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
150
-
-
-
-
2000
1000
-
Typ.
-
-
-
-
-
-
-
Max.
-
100
1
2
1.2
2.2
-
-
200
Unit Test Conditions
V IC=100μA, IE=0
nA VCB=150V, IE=0
μA VCE=150V, IB=0
mA VEB=5V, IC=0
V IC=2A, IB=2mA
V VCE=4V, IC=2A
- VCE=4V, IC=1A
- VCE=4V, IC=2A
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD2195SM3
CYStek Product Specification


Features CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195SM3 Spec. No. : C654M3 Issued Date : 2016.12.01 Revi sed Date : Page No. : 1/8 Description The BTD2195SM3 is designed for use in g eneral purpose amplifier and low speed switching application. Pb-free lead pla ting package process is adopted. Equiv alent Circuit BTD2195SM3 B C Outline SOT-89 R1≒5K R2≒120 E B:Base C Collector E:Emitter BCE Ordering Information Device Package BTD2195SM 3-0-T2-G SOT-89 (Pb-free lead plating and halogen-free package) Shipping 100 0 pcs / Tape & Reel Environment friend ly grade : S for RoHS compliant product s, G for RoHS compliant and green compo und products Packing spec, T2 :1000 pcs /tape & reel, 7” reel Product rank, z ero for no rank products Product name BTD2195SM3 CYStek Product Specificatio n CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2016.12.01 Revi sed Date : Page No. : 2/8 Absolute Max imum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter .
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