BTD2195SN3 Transistor Datasheet

BTD2195SN3 Datasheet, PDF, Equivalent


Part Number

BTD2195SN3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD2195SN3 Datasheet


BTD2195SN3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2195SN3
Spec. No. : C654N3
Issued Date : 2017.08.02
Revised Date : 2017.10.06
Page No. : 1/7
Description
The BTD2195SN3 is designed for use in general purpose amplifier and low speed switching application.
Pb-free lead plating package process is adopted.
Equivalent Circuit
BTD2195SN3
B
C
Outline
SOT-23
C
R15K R2120
E
BBase CCollector EEmitter
E
B
Ordering Information
Device
Package
BTD2195SN3-0-T1-G
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD2195SN3
CYStek Product Specification

BTD2195SN3
CYStech Electronics Corp.
Spec. No. : C654N3
Issued Date : 2017.08.02
Revised Date : 2017.10.06
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
Note : 1. Single Pulse Pw350μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
RθJA
RθJC
PD
Tj
Tstg
Limits
150
150
5
2
4 (Note 1)
500
100
0.3
1.5
-55~+175
-55~+175
Unit
V
A
°C/W
W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
150
-
-
-
-
2000
1000
-
Typ.
-
-
-
-
-
-
-
Max.
-
100
1
2
1.2
2.2
-
-
200
Recommended Soldering Footprint
Unit Test Conditions
V IC=100μA, IE=0
nA VCB=150V, IE=0
μA VCE=150V, IB=0
mA VEB=5V, IC=0
V IC=2A, IB=2mA
V VCE=4V, IC=2A
- VCE=4V, IC=1A
- VCE=4V, IC=2A
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD2195SN3
CYStek Product Specification


Features CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195SN3 Spec. No. : C654N3 Issued Date : 2017.08.02 Revi sed Date : 2017.10.06 Page No. : 1/7 D escription The BTD2195SN3 is designed f or use in general purpose amplifier and low speed switching application. Pb-fr ee lead plating package process is adop ted. Equivalent Circuit BTD2195SN3 B C Outline SOT-23 C R1≒5K R2≒120 E B:Base C:Collector E:Emitter E B Ordering Information Device Packa ge BTD2195SN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Envir onment friendly grade : S for RoHS comp liant products, G for RoHS compliant an d green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Pr oduct rank, zero for no rank products P roduct name BTD2195SN3 CYStek Product Specification CYStech Electronics Cor p. Spec. No. : C654N3 Issued Date : 20 17.08.02 Revised Date : 2017.10.06 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vo.
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