BTD2195T3

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195T3 BVCEO IC VCE(SAT) Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 1/6 120V 4A 1.5V(max) Description The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit BTD2195T3 B C Outline TO-126 R1≒8K R2≒120 E B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation TA=25°C TC=25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating Junction Temperature Range Storage Temperature Range Note : 1. Single Pulse Pw≦300μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD RθJA RθJC Tj Tstg Limits 130 120 5 4 6 (Note 1) 1.25 40 100 3.13 -55~+150 -55~+150 Unit V A W °C/W °C BTD2195T3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654T3 Issued Date : 2010.09.21 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 120 130 - 1000 1000 - Typ. - - Max. 10 10 2 1.5 2 200 Unit Test Conditions V IC=1mA, IB=0 V IC=100μA, IE=0 μA VCB=100V, IE=0 μA VCE=100V, IB=0 mA VEB=5V, IC=0 V IC=2A, IB=2mA V VCE=4V, IC=2A - VCE=4V, IC=1A - VCE=4V, IC=2A pF VCB=10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ...