BTD2195T3 Transistor Datasheet

BTD2195T3 Datasheet, PDF, Equivalent


Part Number

BTD2195T3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD2195T3 Datasheet


BTD2195T3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2195T3
BVCEO
IC
VCE(SAT)
Spec. No. : C654T3
Issued Date : 2010.09.21
Revised Date :
Page No. : 1/6
120V
4A
1.5V(max)
Description
The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application.
Pb-free lead plating package process is adopted.
Equivalent Circuit
BTD2195T3
B
C
Outline
TO-126
R18K R2120 E
BBase
CCollector
EEmitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
TA=25°C
TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
Note : 1. Single Pulse Pw300μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
RθJC
Tj
Tstg
Limits
130
120
5
4
6 (Note 1)
1.25
40
100
3.13
-55~+150
-55~+150
Unit
V
A
W
°C/W
°C
BTD2195T3
CYStek Product Specification

BTD2195T3
CYStech Electronics Corp.
Spec. No. : C654T3
Issued Date : 2010.09.21
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
120
130
-
-
-
-
1000
1000
-
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
10
10
2
1.5
2
-
-
200
Unit Test Conditions
V IC=1mA, IB=0
V IC=100μA, IE=0
μA VCB=100V, IE=0
μA VCE=100V, IB=0
mA VEB=5V, IC=0
V IC=2A, IB=2mA
V VCE=4V, IC=2A
- VCE=4V, IC=1A
- VCE=4V, IC=2A
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD2195T3
Package
TO-126
(Pb-free lead plating)
Shipping
200 pcs / bag, 15 bags/box, 10 boxes/carton
Marking
D2195
BTD2195T3
CYStek Product Specification


Features CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195T3 BVCEO IC VCE(SAT) Spec. No. : C654T3 Issued Dat e : 2010.09.21 Revised Date : Page No. : 1/6 120V 4A 1.5V(max) Description Th e BTD2195T3 is designed for use in gene ral purpose amplifier and low speed swi tching application. Pb-free lead platin g package process is adopted. Equivale nt Circuit BTD2195T3 B C Outline TO- 126 R1≒8K R2≒120 E B:Base C:Co llector E:Emitter ECB Absolute Maxi mum Ratings (Ta=25°C) Parameter Coll ector-Base Voltage Collector-Emitter V oltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse ) Power Dissipation TA=25°C TC=25°C Thermal Resistance, Junction to Ambie nt Thermal Resistance, Junction to Cas e Operating Junction Temperature Range Storage Temperature Range Note : 1. Single Pulse Pw≦300μs, Duty≦2%. S ymbol VCBO VCEO VEBO IC ICP PD RθJA R JC Tj Tstg Limits 130 120 5 4 6 (Note 1) 1.25 40 100 3.13 -55~+150 -55~+150 Unit V A W °C/W °C BTD2195T3 CYStek Produ.
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