BTD2568M3 Transistor Datasheet

BTD2568M3 Datasheet, PDF, Equivalent


Part Number

BTD2568M3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD2568M3 Datasheet


BTD2568M3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2568M3
Spec. No. : C211M3
Issued Date : 2018.06.28
Revised Date :
Page No. : 1/8
Features
High BVCEO
Complementary to BTA1727M3
Pb-free lead plating package
Symbol
BTD2568M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD2568M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7reel
Product rank, zero for no rank products
Product name
BTD2568M3
CYStek Product Specification

BTD2568M3
CYStech Electronics Corp.
Spec. No. : C211M3
Issued Date : 2018.06.28
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
400
400
6
300
1
200
0.6
1
2
-55~+150
-55~+150
*1
*2
Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.
*2 When mounted on a 40*40*0.7mm ceramic board.
Unit
V
V
V
mA
A
mA
W
C
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
400
400
6
-
-
-
-
-
-
160
150
75
50
-
Typ.
-
-
-
-
-
70
94
668
744
-
-
-
-
3.8
Max.
-
-
-
100
100
200
300
900
1200
320
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
-
-
-
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=400V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f =100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD2568M3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2568M3 Spec. No. : C211M3 Issued Date : 2018. 06.28 Revised Date : Page No. : 1/8 Fe atures  High BVCEO  Complementary to BTA1727M3  Pb-free lead plating package Symbol BTD2568M3 Outline SOT-8 9 B:Base C:Collector E:Emitter BCE Ordering Information Device BTD25 68M3-0-T2-G Package SOT-89 (Pb-free le ad plating and halogen-free package) S hipping 1000 pcs / Tape & Reel Environ ment friendly grade : S for RoHS compli ant products, G for RoHS compliant and green compound products Packing spec, T 2 :1000 pcs/tape & reel, 7” reel Prod uct rank, zero for no rank products Pro duct name BTD2568M3 CYStek Product Sp ecification CYStech Electronics Corp. Spec. No. : C211M3 Issued Date : 2018. 06.28 Revised Date : Page No. : 2/8 Ab solute Maximum Ratings (Ta=25C) Par ameter Symbol Limits Collector-Base Voltage Collector-Emitter Voltage Emitt er-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current P.
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