BTD2568M3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2568M3 Spec. No. : C211M3 Issued Date : 2018.06.28 Revised Date : Page No. : 1/8 Features  High BVCEO  Complementary to BTA1727M3  Pb-free lead plating package Symbol BTD2568M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD2568M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD2568M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C211M3 Issued Date : 2018.06.28 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range VCBO VCEO VEBO IC ICP IB PD Tj Tstg 400 400 6 300 1 200 0.6 1 2 -55~+150 -55~+150 *1 *2 Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm. *2 When mounted on a 40*40*0.7mm ceramic board. Unit V V V mA A mA W C C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 400 400 6 160 150 75 50 - Typ. 70 9...