30V P-Channel MOSFET
Main Product Characteristics
VBDSS
-30V
RDS(ON)
8.5mΩ
ID -50A
SSFN3903
30V P-Channel MOSFET
D
DD DD SG
SS
G S
F...
Description
Main Product Characteristics
VBDSS
-30V
RDS(ON)
8.5mΩ
ID -50A
SSFN3903
30V P-Channel MOSFET
D
DD DD SG
SS
G S
Features and Benefits
PPAK3X3
Advanced MOSFET process technology Ideal for DC-DC converter, power management in portable
battery, computer, printer, cellular and general purpose applications
Low on-resistance with low gate charge
Fast switching and reverse body recovery
Schematic Diagram
Description
The SSFN3903 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications..
Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1
Power Dissipation (TC=25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operating Junction Temperature Range
Symbol VDS VGS
ID
IDM PD
TSTG TJ
Value -30 ±20 -50
-32 -200 59 0.47 -55 to 150 -55 to 150
Unit V V A
A A W W/°C °C °C
Thermal Characteristics
Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case
Symbol RθJA RθJC
Typ. -----
Max. 62 2.1
Unit °C/W °C/W
1/6
SSFN3903
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise specified)
Parameter Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperatur...
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