SSFN3903 MOSFET Datasheet

SSFN3903 Datasheet, PDF, Equivalent


Part Number

SSFN3903

Description

30V P-Channel MOSFET

Manufacture

GOOD-ARK

Total Page 6 Pages
Datasheet
Download SSFN3903 Datasheet


SSFN3903
Main Product Characteristics
VBDSS
-30V
RDS(ON)
8.5mΩ
ID -50A
SSFN3903
30V P-Channel MOSFET
D
DD DD
SG
SS
G
S
Features and Benefits
PPAK3X3
„ Advanced MOSFET process technology
„ Ideal for DC-DC converter, power management in portable
battery, computer, printer, cellular and general purpose
applications
„ Low on-resistance with low gate charge
„ Fast switching and reverse body recovery
Schematic Diagram
Description
The SSFN3903 utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch
mode power supply and a wide variety of other applications..
Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(TC=25°C)
Drain Current – Continuous
(TC=100°C)
Drain Current – Pulsed1
Power Dissipation (TC=25°C)
Power Dissipation – Derate
above 25°C
Storage Temperature Range
Operating Junction Temperature
Range
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Value
-30
±20
-50
-32
-200
59
0.47
-55 to 150
-55 to 150
Unit
V
V
A
A
A
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Symbol
RθJA
RθJC
Typ.
---
---
Max.
62
2.1
Unit
°C/W
°C/W
1/6

SSFN3903
SSFN3903
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise specified)
Parameter
Off Characteristics
Drain-Source Breakdown
Voltage
BVDSS Temperature
Coefficient
Drain-Source Leakage
Current
Gate-Source Leakage
Current
On Characteristics
Static Drain-Source
On-Resistance
Gate Threshold Voltage
VGS(th) Temperature
Coefficient
Symbol
Conditions
BVDSS
BVDSS/
TJ
IDSS
IGSS
VGS=0V , ID=-250uA
Reference to 25°C ,
ID=-1mA
VDS=-30V , VGS=0V ,
TJ=25°C
VDS=-24V , VGS=0V ,
TJ=125°C
VGS=±20V , VDS=0V
RDS(ON)
VGS(th)
VGS(th)
VGS=-10V , ID=-10A
VGS=-4.5V , ID=-8A
VGS=VDS , ID =-250uA
Forward Transconductance gfs
VDS=-10V , ID=-10A
Min.
-30
---
---
---
---
---
---
-1.2
---
---
Dynamic and Switching Characteristics
Total Gate Charge2, 3
Gate-Source Charge2, 3
Qg
VDS=-15V , VGS=- 4.5V ,
Qgs ID=-10A
Gate-Drain Charge2, 3
Qgd
---
---
---
Turn-On Delay Time2, 3
Td(on)
Rise Time2, 3
Turn-Off Delay Time2, 3
Tr
Td(off)
VDD=-15V ,
VGS=-10V , RG=6Ω,
ID=-1A
Fall Time2, 3
Tf
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Resistance
Ciss
Coss
Crss
VDS=-15V , VGS=0V ,
F=1MHz
Rg
VGS=0V, VDS=0V,
F=1MHz
Drain-Source Diode Characteristics and Maximum Ratings
---
---
---
---
---
---
---
---
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
IS
ISM
VSD
VG=VD=0V , Force
Current
VGS=0V , IS=-1A ,
TJ=25°C
Notes:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed, pulse width 300uS, duty cycle 2 % .
3. Essentially independent of operating temperature.
---
---
---
Typ.
---
-0.03
---
---
---
7.1
11.5
-1.6
4
14
35
10.8
10.6
24.5
10.5
156.8
50
3300
410
280
8.5
---
---
---
Max.
Unit
---
---
-1
-10
±100
V
V/°C
uA
uA
nA
8.5 m
14 m
-2.5 V
--- mV/°C
--- S
56
16
16
38
16
230
75
4800
700
500
12
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
-50
-100
-1
A
A
V
2/6


Features Main Product Characteristics VBDSS -30 V RDS(ON) 8.5mΩ ID -50A SSFN3903 3 0V P-Channel MOSFET D DD DD SG SS G S Features and Benefits PPAK3X3 „ Ad vanced MOSFET process technology „ Ide al for DC-DC converter, power managemen t in portable battery, computer, printe r, cellular and general purpose applica tions „ Low on-resistance with low gat e charge „ Fast switching and reverse body recovery Schematic Diagram Descr iption The SSFN3903 utilizes the latest techniques to achieve high cell densit y and low on-resistance. These features make this device extremely efficient a nd reliable for use in high efficiency switch mode power supply and a wide var iety of other applications.. Absolute Maximum Ratings (TC=25°C unless otherw ise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Curre nt – Continuous (TC=25°C) Drain Curr ent – Continuous (TC=100°C) Drain Cu rrent – Pulsed1 Power Dissipation (TC =25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operat.
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