MMBD914 Diode Datasheet

MMBD914 Datasheet, PDF, Equivalent


Part Number

MMBD914

Description

Switching Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download MMBD914 Datasheet


MMBD914
Features
z Fast Switching Speed
z For General Purpose Switching Applications
z High Conductance
1
2
MMBD914
Switching Diode
3
Schematic Diagram
SOT-23
Absolute Maximum Ratings
(TA=25°C unless otherwise specified)
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VRM
VRRM
VRWM
VR
IO
IFSM
PD
RθJA
TJ
TSTG
Value
100
100
300
2
350
357
150
-55 to +150
Electrical Characteristics (TA=25°C unless otherwise specified)
Unit
V
mA
A
mW
/W
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
V (BR)
VF1
VF2
VF3
VF4
IR1
IR2
CD
trr
Min
100
Max Unit
V
715 mV
855 mV
1000 mV
1250 mV
1 uA
25 nA
2 pF
4 ns
Conditions
IR=100μA
F=1mA
F=10mA
F=50mA
F=150mA
R=75V
R=20V
VR=0,f=1MHz
IF =IR=10mA,
Irr=0.1*IR
1/3

MMBD914
Typical Characteristics Curves
Forward Characteristics
300
100
30
10
3
1
0.3
0.1
0.0
0.4 0.8
FORWARD VOLTAGE
1.2
VF (V)
1.6
1000
300
100
30
10
3
1
0
MMBD914
Switching Diode
Reverse Characteristics
Ta=100
Ta=25
20 40 60
REVERSE VOLTAGE VR (V)
80
Capacitance Characteristics
1.4
Ta=25
f=1MHz
1.3
400
300
Power Derating Curve
1.2 200
1.1 100
1.0
0
5 10 15 20
REVERSE VOLTAGE VR (V)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ()
2/3


Features Features z Fast Switching Speed z For Ge neral Purpose Switching Applications z High Conductance 1 2 MMBD914 Switchin g Diode 3 Schematic Diagram SOT-23 A bsolute Maximum Ratings (TA=25°C unles s otherwise specified) Parameter Non-Re petitive Peak Reverse Voltage Peak Repe titive Peak Reverse Voltage Working Pea k Reverse Voltage DC Blocking Voltage A verage Rectified Output Current Non-Rep etitive Peak Forward Surge Current @8.3 ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperatu re Storage Temperature Symbol VRM VRRM VRWM VR IO IFSM PD RθJA TJ TSTG Valu e 100 100 300 2 350 357 150 -55 to +150 Electrical Characteristics (TA=25°C unless otherwise specified) Unit V mA A mW ℃/W ℃ ℃ Parameter Reverse B reakdown Voltage Forward Voltage Revers e Current Diode Capacitance Reverse Rec overy Time Symbol V (BR) VF1 VF2 VF3 V F4 IR1 IR2 CD trr Min 100 Max Unit V 715 mV 855 mV 1000 mV 1250 mV 1 uA 25 n A 2 pF 4 ns Conditions IR=100μA F=1mA F=10mA F=50mA F=150mA R=75V R=20V.
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