BAW56

Features ■ Fast Switching Speed ■ For General Purpose Switching ■ Applications High Conductance BAW56 Switching Diode 3 Schematic Diagram 2 1 SOT-23 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol VR IF IFSM PD RθJA TJ TSTG Value 70 200 2.0 225 556 150 -55 to +150 Unit V mA A mW ℃/W ℃ ℃ Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance Between Terminals Reverse Recovery Time Symbol VR VF1 VF2 VF3 VF4 IR CT t rr Conditions IR=100μA IF=1mA IF=10mA IF=50mA IF=150mA VR=70V VR=0,f=1MHz IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω Min 70 - - Max - 0.715 0.855 1 1.25 2.5 1.5 6 Unit V V V V V μA pF ns 1/3 FORWARD CURRENT IF (mA) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) Typical Characteristics Curves Forward Characteristics 300 100 30 10 3 1 0.3 0.1 0.0 0.4 0.8 FORWARD VOLTAGE 1.2 VF (V) 1.6 1000 300 100 30 10 3 1 0 BAW56 Switching Diode Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE VR (V) 80 Capacitance Characteristics 1.4 Ta=25℃ f=1MHz 1.3 300 250 200 Power Derating Curve 1.2 150 100 1.1 50 1.0 0 5 10 15 REVERSE VOLTAGE VR (V) 20 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) CAPACITANCE BETWEEN TERMINALS CT (pF) POWER D...