MMBD7000

MMBD7000 Switching Diode Features ■ Dual switching diode ■ Fast switching ■ For general purpose switching applciations Schematic Diagram Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t =8.3 ms Power Dissipation Thermal Resistance,Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VRRM VRWM VR(RMS) IO IFSM PD RθJA TJ TSTG Value 100 75 53 200 2 225 556 150 -55 to +150 3 2 1 SOT-23 Unit V V V mA A mW ℃/W ℃ ℃ Electrical Characteristics (TA=25°C unless otherwise noted） Parameter Reverse Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Diode Capacitance Reverse Recovery Time Symbol Test Conditions V(BR) IR VF CT trr IR=100μA VR=50V VR=100V IF=1mA IF=10mA IF=100mA VR= 0V,f = 1.0MHz IF=IR=10mA, Irr=0.1 x IR,RL=100Ω Min 100 - 0.55 0.67 0.75 - - Max - 1.0 3.0 0.7 0.82 1.1 2 4 Unit V μA V pF ns 1/3 MMBD7000 Switching Diode Typical Electrical Characteristic Curves 200 Pulsed 100 Forward Characteristics Reverse Characteristics 10000 Pulsed 1000 Ta=100C 10 100 REVERSE CURRENT IR (nA) FORWARD CURRENT IF (mA) =100C =25C T a T a 1 10 Ta=25C CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 FORWARD VOLTAGE VF (V) Capacitance Characteristics 1.4 T...