GSDAN222 Diode Datasheet

GSDAN222 Datasheet, PDF, Equivalent


Part Number

GSDAN222

Description

Switching Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GSDAN222 Datasheet


GSDAN222
GSDAN222
Switching Diode
Features
High speed
Suitable for high packing density layout
High reliability
3
2
1
SOT-523
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Average Rectified Output Current
Power Dissipation
Thermal Resistance From Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IFSM
IO
PD
RθJA
TJ
TSTG
Value
80
80
300
2.0
100
150
833
150
-55 to +150
1
3
2
Schematic Diagram
Unit
V
V
mA
A
mA
mW
°C/W
°C
°C
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
Test conditions
Min
Max
V(BR)
IR= 100μA
80 -
IR VR=70V - 0.1
VF IF=100mA -
CD VR=0, f=1MHz -
trr
VR=6V, IF=IR=5mA
-
1.2
3.5
4
Unit
V
μA
V
pF
ns
1/3

GSDAN222
Typical Characteristics Curves
Forward Characteristics
300
100
10
1
GSDAN222
Switching Diode
10000
1000
100
10
Reverse Characteristics
T =100
a
T =25
a
0.1
0.0
0.4 0.8 1.2
FORWARD VOLTAGE V (V)
F
1.6
1
0 20 40 60 80
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
1.6
T =25
a
f=1MHz
1.4
1.2
1.0
0.8
0.6
0 4 8 12 16 20
REVERSE VOLTAGE V (V)
R
Power Derating Curve
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE T ()
a
2/3


Features GSDAN222 Switching Diode Features ■ H igh speed ■ Suitable for high packing density layout ■ High reliability 3 2 1 SOT-523 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Non-Repetitive Peak Reverse V oltage DC Blocking Voltage Forward Cont inuous Current Non-Repetitive Peak Forw ard Surge Current @t=8.3ms Average Rect ified Output Current Power Dissipation Thermal Resistance From Junction to Amb ient Junction Temperature Storage Tempe rature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG Value 80 80 300 2.0 100 150 833 150 -55 to +150 1 3 2 Sche matic Diagram Unit V V mA A mA mW °C/W °C °C Electrical Characteristics (T A=25°C unless otherwise specified) Pa rameter Reverse Breakdown Voltage Rever se Voltage Leakage Current Forward Volt age Diode Capacitance Reverse Recovery Time Symbol Test conditions Min Max V(BR) IR= 100μA 80 - IR VR=70V - 0.1 VF IF=100mA - CD VR=0, f=1MHz - trr VR=6V, IF=IR=5mA - 1.2 3.5 4 Unit V μA V pF ns 1/3 T a =100℃ Typ.
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