Fast Switching Diode
Features
Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion....
Description
Features
Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4151.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Cathode Band Color: Black
LL4151
Small-Signal Diode Fast Switching Diode
Maximum Ratings and Thermal Characteristics
(T =25oC unless otherwise noted.) A
Parameter
Symbol
Limit
Reverse voltage
Peak reverse voltage
Forward DC current at Tamb=25oC (1) Average rectified current (half wave rectification with resist. load at Tamb=25oC f>50Hz) (1) Surge forward current at t<1s and Tj=25oC Power dissipation at Tamb=25oC (1) Thermal resistance junction to ambient air (1)
Junction temperature
Storage temperature range
V R
V RM IF
IF(AV) IFSM Ptot RθJA Tj TS
50 75 200 150 500 500 350 175 -65 to +175
Unit Volts Volts mA mA mA mW oC/W
oC oC
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage Leakage current Capacitance
Reverse recovery time
Rectification efficiency (see third Page)
VF IR Ctot
trr
ην
IF=50mA
VR=50V VR=50V, TJ=150OC
VF=VR=0V
IF=10mA, IR=10mA Irr=1mA, RL=100Ω IF=10mA, IR=1mA VR=6V, RL=100Ω
f=100MHz, VRF=2V
Notes: 1. Valid provided that electrodes are kept at ambient temperature
0.45
-
1.0 Volt 50 nA 50 uA 2.0 pF
4.0 ns
2.0
--
649
RATINGS AND CHARACTERISTIC CURVES
(TA = 25oC u...
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