GSD101AWS Diode Datasheet

GSD101AWS Datasheet, PDF, Equivalent


Part Number

GSD101AWS

Description

Schottky Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GSD101AWS Datasheet


GSD101AWS
Features
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
Low reverse capacitance
GSD101AWS
Schottky Diode
Cathode Band
Pin 2
Pin 1
SOD-323
Absolute Maximum Ratings
(TA=25°C unless otherwise noted
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS reverse Voltage
Forward Continuous Current
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
PD
RΘJA
Tj
TSTG
Schematic Diagram
Value
Unit
60 V
42
15
2
200
500
125
-50 to +150
V
mA
A
mW
/W
Electrical Characteristics (TA=25°C unless otherwise noted
Parameter
Reverse Voltage
Reverse Current
Forward Voltage
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=10μA
VR=50V
IF=1mA
IF=15mA
VR=0V,f=1MHz
IF= IR=5mA, Irr=0.1×IR, RL=100Ω
Min
60
-
-
-
-
-
Max Unit
-V
0.2 μA
0.41
V
1
2 pF
1 ns
1/3

GSD101AWS
Typical Characteristic Curves
15
10 Pulsed
Forward Characteristics
1
Ta=100
0.1
Ta=25
0.01
1E-3
0
100 200 300 400 500 600 700
FORWARD VOLTAGE VF (mV)
Capacitance Characteristics
2.5
Ta=25
f=1MHz
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
GSD101AWS
Schottky Diode
100
Pulsed
10
Reverse Characteristics
Ta=100
1
0.1
Ta=25
0.01
1E-3
0
10 20 30 40 50
REVERSE VOLTAGE VR (V)
60
Power Derating Curve
250
200
150
100
50
0
0 25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
2/3


Features Features  Low forward voltage drop Guard ring construction for transient protection  Negligible reverse reco very time  Low reverse capacitance GSD101AWS Schottky Diode Cathode Band Pin 2 Pin 1 SOD-323 Absolute Maximu m Ratings (TA=25°C unless otherwise no ted) Parameter Repetitive Peak Rever se Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS reverse Voltag e Forward Continuous Current Symbol VR RM VRWM VR VR(RMS) IFM Non-repetitive Peak Forward Surge Current @t=8.3ms IFS M Power Dissipation Thermal Resistance from Junction to Ambient Junction Temp erature Storage Temperature PD RΘJA T j TSTG Schematic Diagram Value Unit 60 V 42 15 2 200 500 125 -50 to +150 V mA A mW ℃/W ℃ ℃ Electrical Ch aracteristics (TA=25°C unless otherwis e noted) Parameter Reverse Voltage R everse Current Forward Voltage Total Ca pacitance Reverse Recovery Time Symbol V(BR) IR VF Ctot trr Test conditions IR=10μA VR=50V IF=1mA IF=15mA VR=0V,f=1MHz IF= IR=5mA, Irr=0.1×IR, RL=100Ω Min 60 -.
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