GSD101AWS

Features  Low forward voltage drop  Guard ring construction for transient protection  Negligible reverse recovery time  Low reverse capacitance GSD101AWS Schottky Diode Cathode Band Pin 2 Pin 1 SOD-323 Absolute Maximum Ratings (TA=25°C unless otherwise noted） Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS reverse Voltage Forward Continuous Current Symbol VRRM VRWM VR VR(RMS) IFM Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature PD RΘJA Tj TSTG Schematic Diagram Value Unit 60 V 42 15 2 200 500 125 -50 to +150 V mA A mW ℃/W ℃ ℃ Electrical Characteristics (TA=25°C unless otherwise noted） Parameter Reverse Voltage Reverse Current Forward Voltage Total Capacitance Reverse Recovery Time Symbol V(BR) IR VF Ctot trr Test conditions IR=10μA VR=50V IF=1mA IF=15mA VR=0V,f=1MHz IF= IR=5mA, Irr=0.1×IR, RL=100Ω Min 60 - Max Unit -V 0.2 μA 0.41 V 1 2 pF 1 ns 1/3 Typical Characteristic Curves 15 10 Pulsed Forward Characteristics 1 Ta=100℃ 0.1 Ta=25℃ FORWARD CURRENT IF (mA) 0.01 1E-3 0 100 200 300 400 500 600 700 FORWARD VOLTAGE VF (mV) Capacitance Characteristics 2.5 Ta=25℃ f=1MHz 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 REVERSE VOLTAGE VR (V) 30 POWER DISSIPATION PD (mW) REVERSE CURRENT IR (uA) GSD101AWS Schottky Diode 100 Pulsed 10 Reverse Characteristics Ta=100℃ 1 0.1 Ta=25℃ 0.01 1E-3 0 ...