GSD107WS

GSD107WS Schottky Barrier Diode Reverse Voltage 30V Forward Current 2A Features ■ Low Forward Voltage Drop ■ Guard Ring Die Construction for Transient Protection ■ Ideal for Low Logic Level Applications ■ Low Capacitance + SOD-323 Schematic Diagram Absolute Maximum Ratings (TA=25°C unless otherwise noted） Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking V oltage Forward Continuous Current Non-repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation T C=25℃ Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRRM VRWM VR IF IFSM PD RθJA TJ TSTG Value 30 100 2 250 400 125 -55 to +150 Unit V mA A mW °C/W °C °C Electrical Characteristics (TA=25°C unless otherwise noted） Parameter Reverse Breakdown Voltage Forward Voltage Reverse Current Capacitance Between Terminals Conditions IR=100µA IF=2mA IF=15mA IF=50mA IF=100mA VR=25V VR=10V,f=1MHz Symbol VR VF IR CT Min. 30 - - Typ. 300 360 430 500 7 Max. Unit -V mV 550 800 1 µA - pF 1/3 Typical Characteristics Curves GSD107WS Schottky Barrier Diode Reverse Voltage 30V Forward Current 2A FORWARD CURRENT IF (mA) 100 30 10 3 1 0.3 0.1 0.0 20 15 10 5 0 0 T a =100℃ T a =25℃ Forward Characteristics 0.1 0.2 0.3 0.4 FORWARD VOLTAGE VF (V) REVERSE CURRENT IR (uA) Reverse Characteristics 1000 300 100 Ta=100℃ 30 10 3 1 Ta=25℃ 0.3 0.1 0.5 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE VR (V) Capacitance Characteristics Ta=25℃ f=1M...