GSD107WS Diode Datasheet

GSD107WS Datasheet, PDF, Equivalent


Part Number

GSD107WS

Description

Schottky Barrier Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GSD107WS Datasheet


GSD107WS
GSD107WS
Schottky Barrier Diode
Reverse Voltage 30V Forward Current 2A
Features
Low Forward Voltage Drop
Guard Ring Die Construction for Transient Protection
Ideal for Low Logic Level Applications
Low Capacitance
-
+
SOD-323
Schematic Diagram
Absolute Maximum Ratings (TA=25°C unless otherwise noted
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
Forward Continuous Current
Non-repetitive Peak Forward Surge Current
@ t=8.3ms
Power Dissipation
T C=25
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VRRM
VRWM
VR
IF
IFSM
PD
RθJA
TJ
TSTG
Value
30
100
2
250
400
125
-55 to +150
Unit
V
mA
A
mW
°C/W
°C
°C
Electrical Characteristics (TA=25°C unless otherwise noted
Parameter
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Capacitance Between Terminals
Conditions
IR=100µA
IF=2mA
IF=15mA
IF=50mA
IF=100mA
VR=25V
VR=10V,f=1MHz
Symbol
VR
VF
IR
CT
Min.
30
-
-
-
-
-
-
Typ.
-
300
360
430
500
-
7
Max. Unit
-V
-
-
mV
550
800
1 µA
- pF
1/3

GSD107WS
Typical Characteristics Curves
GSD107WS
Schottky Barrier Diode
Reverse Voltage 30V Forward Current 2A
100
30
10
3
1
0.3
0.1
0.0
20
15
10
5
0
0
Forward Characteristics
0.1 0.2 0.3 0.4
FORWARD VOLTAGE VF (V)
Reverse Characteristics
1000
300
100 Ta=100
30
10
3
1
Ta=25
0.3
0.1
0.5 0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE VR (V)
Capacitance Characteristics
Ta=25
f=1MHz
300
250
200
Power Derating Curve
150
100
50
5 10 15
REVERSE VOLTAGE VR (V)
0
20 0
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
2/3


Features GSD107WS Schottky Barrier Diode Reverse Voltage 30V Forward Current 2A Feature s ■ Low Forward Voltage Drop ■ Guar d Ring Die Construction for Transient P rotection ■ Ideal for Low Logic Level Applications ■ Low Capacitance + S OD-323 Schematic Diagram Absolute Max imum Ratings (TA=25°C unless otherwise noted) Parameter Peak Repetitive P eak Reverse Voltage Working Peak Rever se Voltage DC Blocking V oltage Forwa rd Continuous Current Non-repetitive P eak Forward Surge Current @ t=8.3ms Po wer Dissipation T C=25℃ Thermal Res istance from Junction to Ambient Junct ion Temperature Storage Temperature S ymbol VRRM VRWM VR IF IFSM PD RθJA TJ TSTG Value 30 100 2 250 400 125 -55 to +150 Unit V mA A mW °C/W °C °C El ectrical Characteristics (TA=25°C unle ss otherwise noted) Parameter Revers e Breakdown Voltage Forward Voltage Rev erse Current Capacitance Between Termin als Conditions IR=100µA IF=2mA IF=15m A IF=50mA IF=100mA VR=25V VR=10V,f=1MHz Symbol VR VF IR CT Min. 30 - - Typ. 300 3.
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