GSBAT54BRW

Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54ADW GSBAT54BRW GSBAT54CDW GSBAT54xxW Series Schottky Diode GSBAT54SDW SOT-363 GSBAT54TW Marking: KL6 GSBAT54DW Marking: KLB GSBAT54JW Marking: KL7 Marking: KL8 Marking: KLA Marking: KLD Marking: KLC Absolute Maximum Ratings (TA=25°C unless otherwise noted） Parameter Symbol Value Repetitive Peak Reverse Voltage VRRM 30 Peak Working Reverse Voltage VRWM 30 DC Blocking Voltage VR 30 Forward Continuous Current IO 200 Repetitive Peak Forward Current IFRM 300 Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 600 Power Dissipation PD 200 Thermal Resistance From Junction To Ambient RΘJA 500 Junction Temperature TJ 125 Storage Temperature TSTG -55 to +150 Unit V V V mA mA mA mW °C/W °C °C 1/3 GSBAT54xxW Series Schottky Diode Electrical Characteristics (TA=25°C unless otherwise noted） Parameter Reverse Voltage Reverse Current Forward Voltage Total Capacitance Reverse Recovery Time Symbol V(BR) IR VF Ctot trr Test conditions IR=100μA VR=25V IF=1mA IF=10mA IF=30mA IF=100mA VR=1V,f=1MHz IF= IR=10mA, Irr=0.1×IR, RL=100Ω Min Max Unit 30 - V - 2 μA - 320 - 400 mV - 500 - 1000 - 10 pF - 5 ns Typical Electrical Characteristic Curves 100 Pulsed 100 Pulsed Ta=100 ℃ ℃ =25℃ =100 FORWARD CURRENT IF (mA) T a T a 10 10 1 Ta=25 ℃ REVERSE CURRENT IR (uA) CAPACITANCE BETWEEN TERMINALS CT (pF)...