Features
■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection
Schematic...
Features
■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection
Schematic Diagram and Marking
GSBAT54ADW GSBAT54BRW GSBAT54CDW
GSBAT54xxW Series
Schottky Diode
GSBAT54SDW
SOT-363
GSBAT54TW
Marking: KL6
GSBAT54DW
Marking: KLB
GSBAT54JW
Marking: KL7
Marking: KL8
Marking: KLA
Marking: KLD
Marking: KLC
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Repetitive Peak Reverse Voltage
VRRM
30
Peak Working Reverse Voltage
VRWM
30
DC Blocking Voltage
VR 30
Forward Continuous Current
IO 200
Repetitive Peak Forward Current
IFRM
300
Non-repetitive Peak Forward Surge Current @t=8.3ms
IFSM
600
Power Dissipation
PD 200
Thermal Resistance From Junction To Ambient
RΘJA
500
Junction Temperature
TJ 125
Storage Temperature
TSTG
-55 to +150
Unit V V V mA mA mA
mW °C/W
°C °C
1/3
GSBAT54xxW Series
Schottky Diode
Electrical Characteristics (TA=25°C unless otherwise noted)
Parameter Reverse Voltage Reverse Current
Forward Voltage
Total Capacitance Reverse Recovery Time
Symbol V(BR) IR
VF
Ctot trr
Test conditions IR=100μA VR=25V IF=1mA IF=10mA IF=30mA IF=100mA VR=1V,f=1MHz IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Min Max Unit 30 - V - 2 μA
- 320 - 400
mV - 500 - 1000 - 10 pF - 5 ns
Typical Electrical Characteristic Curves
100
Pulsed
100
Pulsed
Ta=100 ℃
℃
=25℃
=100
FORWARD CURRENT IF (mA)
T
a
T a
10
10
1
Ta=25 ℃
REVERSE CURRENT IR (uA)
CAPACITANCE BETWEEN TERMINALS CT (pF)...