GSBAT54CT Diode Datasheet

GSBAT54CT Datasheet, PDF, Equivalent


Part Number

GSBAT54CT

Description

Schottky Diode

Manufacture

GOOD-ARK

Total Page 3 Pages
Datasheet
Download GSBAT54CT Datasheet


GSBAT54CT
Features
Low forward voltage drop
Fast switching
PN junction guard ring for transient and ESD protection
Schematic Diagram and Marking
GSBAT54T
GSBAT54xT Series
Schottky Diode
GSBAT54AT
3
1
2
SOT-523
Marking: L1
GSBAT54CT
Marking: L2
GSBAT54ST
Marking: L3
Marking: L4
Absolute Maximum Ratings (TA=25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Symbol
VRRM
Value
30
Working Peak Reverse Voltage
VRWM
30
DC Reverse Voltage
VR 30
Forward Continuous Voltage
Repetitive Peak Forward Voltage
Non-repetitive Peak Forward Surge Current
@t<1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
IF
IFRM
IFSM
PD
RθJA
TJ,TSTG
200
300
600
150
833
-65 to +150
1/3
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C

GSBAT54CT
GSBAT54xT Series
Schottky Diode
Electrical Characteristics (TA=25°C unless otherwise noted
Parameter
Symbol Test Conditions
Reverse Breakdown Voltage V(BR)R
IR=100μA
Leakage Current
Forward Voltage
=IR VR 25V
IF=0.1mA
IF=1.0mA
VF IF=10mA
IF=30mA
Min Max
30
2.0
240
320
400
500
Unit
V
μA
mV
Typical Total Capacitance =CT =VR 1.0V,f 1MHz
Reverse Recovery Time
trr
IF=IR=10mA,to IR=1.0mA RL=100Ω
10 pF
5.0 ns
Typical Electrical Characteristic Curves
1/3
2/3


Features Features ■ Low forward voltage drop Fast switching ■ PN junction guard ring for transient and ESD protection S chematic Diagram and Marking GSBAT54T GSBAT54xT Series Schottky Diode GSBAT5 4AT 3 1 2 SOT-523 Marking: L1 GSBAT54 CT Marking: L2 GSBAT54ST Marking: L3 Marking: L4 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Pa rameter Peak Repetitive Reverse Voltage Symbol VRRM Value 30 Working Peak R everse Voltage VRWM 30 DC Reverse Vo ltage VR 30 Forward Continuous Voltag e Repetitive Peak Forward Voltage Non-r epetitive Peak Forward Surge Current @t <1.0s Power Dissipation Thermal Resista nce Junction to Ambient Junction and St orage Temperature IF IFRM IFSM PD RθJ A TJ,TSTG 200 300 600 150 833 -65 to + 150 1/3 Unit V V V mA mA mA mW °C/W °C GSBAT54xT Series Schottky Diode E lectrical Characteristics (TA=25°C unl ess otherwise noted) Parameter Symb ol Test Conditions Reverse Breakdown V oltage V(BR)R IR=100μA Leakage Current Forward Voltage =IR VR 25V IF=0.1mA .
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