BAS85 Diode Datasheet

BAS85 Datasheet, PDF, Equivalent


Part Number

BAS85

Description

Schottky Diode

Manufacture

GOOD-ARK

Total Page 1 Pages
Datasheet
Download BAS85 Datasheet


BAS85
Features
For general purpose applications.
This diode features low turn-on voltage.
The devices are protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges.
This diode is also available in the DO-35 case with type
designation BAT85.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 grams
Cathode Band Color: Green
BAS85
Small-Signal Diode
Schottky Diode
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter
Symbol
Value
Continuous reverse voltage
Forward continuous current at Tamb=25oC
Peak forward current at Tamb=25oC
Surge forward current at tp<1s, Tamb=25oC
Power dissipation at Tamb=65oC
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
VR
IF
IFM
IFSM
Ptot
RθJA
Tj
TS
30
200 (1)
300 (1)
600 (1)
200 (1)
430 (1)
125
-55 to +150
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Reverse breakdown voltage
V(BR)R
IR=10uA (pulsed)
Leakage current
IR VR=25V
Forward voltage
Pulse Test tp < 300us
IF=0.1mA
VF
IF=1mA
IF=10mA
I =30mA
F
IF=100mA
Capacitance
Ctot VR=1V, f=1MHz
Reverse recovery time
trr
IF=10mA, IR=10mA,
IR=1mA
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
698
Unit
Volts
mA
mA
mA
mW
oC/W
oC
oC
Min.
30
-
-
-
-
-
-
-
-
Typ.
-
0.2
-
-
-
0.5
-
-
-
Max.
-
2
0.24
0.32
0.4
-
0.8
10
5
Unit
Volts
uA
Volt
pF
ns


Features Features For general purpose application s. This diode features low turn-on volt age. The devices are protected by a PN junction guard ring against excessive v oltage, such as electrostatic discharge s. This diode is also available in the DO-35 case with type designation BAT85. Mechanical Data Case: MiniMELF Glass C ase (SOD-80) Weight: approx. 0.05 grams Cathode Band Color: Green BAS85 Small -Signal Diode Schottky Diode Maximum R atings and Thermal Characteristics (TA =25oC unless otherwise noted.) Paramet er Symbol Value Continuous reverse v oltage Forward continuous current at Ta mb=25oC Peak forward current at Tamb=25 oC Surge forward current at tp<1s, Tamb =25oC Power dissipation at Tamb=65oC Th ermal resistance junction to ambient ai r Junction temperature Storage temperat ure range VR IF IFM IFSM Ptot RθJA Tj TS 30 200 (1) 300 (1) 600 (1) 200 (1) 430 (1) 125 -55 to +150 Electrical Ch aracteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Reverse breakdown vo.
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