BLF6G20-180RN transistor Datasheet

BLF6G20-180RN Datasheet, PDF, Equivalent


Part Number

BLF6G20-180RN

Description

Power LDMOS transistor

Manufacture

Ampleon

Total Page 13 Pages
Datasheet
Download BLF6G20-180RN Datasheet


BLF6G20-180RN
BLF6G20-180RN;
BLF6G20LS-180RN
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp D IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier WCDMA
1930 to 1990 30 40
17.2 27
38[1]
ACPR
(dBc)
41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 30 V and an IDq of 1400 mA:
Average output power = 40 W
Power gain = 17.2 dB
Efficiency = 27 %
IMD3 = 41 dBc
ACPR = 38 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use

BLF6G20-180RN
BLF6G20(LS)-180RN
Power LDMOS transistor
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range
2. Pinning information
Table 2. Pinning
Pin Description
BLF6G20-180RN (SOT502A)
1 drain
2 gate
3 source
BLF6G20LS-180RN (SOT502B)
1 drain
2 gate
3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
11
[1] 3
22
3
sym112
11
[1] 3
22
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF6G20-180RN -
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
BLF6G20LS-180RN -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
4. Limiting values
BLF6G20-180RN_20LS-180RN#2
Product data sheet
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- 49 A
65 +150 C
- 225 C
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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Features BLF6G20-180RN; BLF6G20LS-180RN Power LDM OS transistor Rev. 2 — 1 September 20 15 Product data sheet 1. Product prof ile 1.1 General description 180 W LDMO S power transistor for base station app lications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performa nce Typical RF performance at Tcase = 25 C in a class-AB production test c ircuit. Mode of operation f VDS PL(A V) Gp D IMD3 (MHz) (V) (W) (dB) (% ) (dBc) 2-carrier WCDMA 1930 to 1990 30 40 17.2 27 38[1] ACPR (dBc) 41[1] [1] Test signal: 3GPP; test mod el 1; 64 DPCH; PAR = 7 dB at 0.01 % pro bability on CCDF per carrier; carrier s pacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge ( ESD). Therefore care should be taken du ring transport and handling. 1.2 Featu res  Typical 2-carrier WCDMA perform ance at frequencies of 1930 MHz and 199 0 MHz, a supply voltage of 30 V and an IDq of 1400 mA:  Average output powe r = 40 W  Power gain = 17.2 dB  Efficiency = 27 %  IMD3 = 41 dBc  ACPR =.
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