BLF6G20LS-180RN

BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 (MHz) (V) (W) (dB) (%) (dBc) 2-carrier WCDMA 1930 to 1990 30 40 17.2 27 38[1] ACPR (dBc) 41[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:  Average output power = 40 W  Power gain = 17.2 dB  Efficiency = 27 %  IMD3 = 41 dBc  ACPR = 38 dBc  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1800 MHz to 2000 MHz)  Internally matched for ease of use BLF6G20(LS)-180RN Power LDMOS transistor  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 M...