BLF6G22LS-40BN transistor Datasheet

BLF6G22LS-40BN Datasheet, PDF, Equivalent


Part Number

BLF6G22LS-40BN

Description

Power LDMOS transistor

Manufacture

Ampleon

Total Page 13 Pages
Datasheet
Download BLF6G22LS-40BN Datasheet


BLF6G22LS-40BN
BLF6G22LS-40BN
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
D
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
2110 to 2170
28 2.5 18.5 16
ACPR
(dBc)
50[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 345 mA:
Average output power = 2.5 W
Power gain = 18.5 dB (typ)
Efficiency = 16 %
ACPR = 50 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range

BLF6G22LS-40BN
BLF6G22LS-40BN
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4, 5
6, 7
Pinning
Description
drain
gate
source
sense drain
sense gate
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
4
[1]
6
5
1
3
2
7
1 4, 5
2 6, 7
3 sym126
Table 3. Ordering information
Type number
Package
Name Description
BLF6G22LS-40BN -
earless flanged ceramic package; 6 leads
Version
SOT1112B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS drain-source voltage
VGS gate-source voltage
-
0.5
VGS(sense)
Tstg
Tj
Tcase
sense gate-source voltage
storage temperature
junction temperature
case temperature
0.5
65
-
[1] -
[1] Continuous use at maximum temperature will affect MTTF.
Max
65
+13
+9
+150
200
150
Unit
V
V
V
C
C
C
5. Recommended operating conditions
Table 5.
Symbol
Tcase
Operating conditions
Parameter
case temperature
6. Thermal characteristics
Conditions
Min Typ Max
40 - +125
Unit
C
BLF6G22LS-40BN#2
Product data sheet
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 12.5 W (CW)
Typ Unit
1.7 K/W
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 13


Features BLF6G22LS-40BN Power LDMOS transistor Re v. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transisto r for base station applications at freq uencies from 2000 MHz to 2200 MHz. Tab le 1. Typical performance RF performan ce at Tcase = 25 C in a common sourc e class-AB production test circuit. Mo de of operation f VDS PL(AV) Gp  D (MHz) (V) (W) (dB) (%) 2-carrier W -CDMA 2110 to 2170 28 2.5 18.5 16 AC PR (dBc) 50[1] [1] Test signal: 3GP P test model 1; 64 DPCH; PAR = 8.4 dB a t 0.01 % probability on CCDF per carrie r; carrier spacing 5 MHz 1.2 Features and benefits  Typical 2-carrier W-CD MA performance at frequencies of 2110 M Hz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:  Average ou tput power = 2.5 W  Power gain = 18. 5 dB (typ)  Efficiency = 16 %  AC PR = 50 dBc  Easy power control Integrated ESD protection  Excell ent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband o.
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