BLF6G22LS-40BN

BLF6G22LS-40BN Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 18.5 16 ACPR (dBc) 50[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz 1.2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:  Average output power = 2.5 W  Power gain = 18.5 dB (typ)  Efficiency = 16 %  ACPR = 50 dBc  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (2000 MHz to 2200 MHz)  Internally matched for ease of use  Integrated current sense  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF6G22LS-40BN Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4, 5 6, 7 Pinning Description drain gate source sense drain sense gate [1] Connected to f...