STB3NK60ZT4 MOSFET Datasheet

STB3NK60ZT4 Datasheet, PDF, Equivalent


Part Number

STB3NK60ZT4

Description

N-CHANNEL Power MOSFET

Manufacture

STMicroelectronics

Total Page 30 Pages
Datasheet
Download STB3NK60ZT4 Datasheet


STB3NK60ZT4
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4
STP3NK60Z, STP3NK60ZFP
Datasheet
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in
D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages
TAB
13
D2PAK
TAB
TAB
TAB
23
1
DPAK
IPAK
3
12
1 23
TO-220
123
TO-220FP
D(2, TAB)
G(1)
Features
Order codes VDS RDS(on) max.
STB3NK60ZT4
STD3NK60Z-1
STD3NK60ZT4
600 V
3.6 Ω
STP3NK60Z
STP3NK60ZFP
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
ID
2.4 A
Package
D2PAK
IPAK
DPAK
TO-220
TO-220FP
Applications
S(3)
AM01475V1
• Switching applications
Product status link
STB3NK60ZT4
STD3NK60Z-1
STD3NK60ZT4
STP3NK60Z
STP3NK60ZFP
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
DS2912 - Rev 6 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

STB3NK60ZT4
STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
D2PAK, TO-220
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
2.4
ID Drain current (continuous) at TC = 100 °C
1.51
IDM (2)
Drain current (pulsed)
9.6
PTOT
Total dissipation at TC = 25 °C
45
ESD
Gate-source human body model
(R = 1.5 kΩ, C = 100 pF)
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat-sink
(t = 1 s, TC = 25 °C)
dv/dt (3) Peak diode recovery voltage slope
Tj Operating junction temperature range
Tstg Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 2.4 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Value
TO-220FP
600
±30
2.4 (1)
1.51 (1)
9.6 (1)
20
2.1
2.5
4.5
-55 to 150
DPAK, IPAK
2.4
1.51
9.6
45
Unit
V
V
A
A
A
W
kV
kV
V/ns
°C
Table 2. Thermal data
Symbol
Parameter
D2PAK TO-220
Value
TO-220FP
Rthj-case Thermal resistance junction-case
2.78
6.25
Rthj-amb
Thermal resistance junction-
ambient
62.5
Rthj-pcb (1) Thermal resistance junction-pcb
35
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
DPAK
IPAK
2.78
100
50
Unit
°C/W
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-
repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.4
150
Unit
A
mJ
DS2912 - Rev 6
page 2/34


Features STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 ST P3NK60Z, STP3NK60ZFP Datasheet N-channe l 600 V, 3.2 Ω typ., 2.4 A SuperMESH Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages TAB 13 D2 PAK TAB TAB TAB 23 1 DPAK IPAK 3 12 1 23 TO-220 123 TO-220FP D(2, TAB) G(1) Features Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK 60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK 60ZFP • Extremely high dv/dt capabil ity • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 2. 4 A Package D2PAK IPAK DPAK TO-220 TO- 220FP Applications S(3) AM01475V1 Switching applications Product stat us link STB3NK60ZT4 STD3NK60Z-1 STD3NK6 0ZT4 STP3NK60Z STP3NK60ZFP Description These high-voltage devices are Zener-p rotected N-channel Power MOSFETs develo ped using the SuperMESH™ technology b y STMicroelectronics, an optimization o f the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to.
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