BTD5213L3 Transistor Datasheet

BTD5213L3 Datasheet, PDF, Equivalent


Part Number

BTD5213L3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

Cystech

Total Page 7 Pages
Datasheet
Download BTD5213L3 Datasheet


BTD5213L3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD5213L3
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2017.11.23
Page No. : 1/7
Description
General purpose mainly intended for use in medium power industrial application and for audio amplifier
output stage.
Features
High collector current and low VCE(SAT).
Complement to BTB5213L3.
Pb-free lead plating and halogen-free package.
Symbol
BTD5213L3
Outline
SOT-223
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD5213L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
BTD5213L3
CYStek Product Specification

BTD5213L3
CYStech Electronics Corp.
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2017.11.23
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
Tj
Tstg
Limits
180
100
5
1
1.5
0.4
0.8
2
-55~+150
-55~+150
Unit
V
V
V
A
A
A
W
W
C
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-case, max
Symbol
RθJA
RθJC
Value
156
62.5
Unit
C/W
C/W
Characteristics (Ta=25C)
Symbol
Min.
Typ.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
180
100
5
-
-
-
-
-
-
200
200
60
-
-
-
-
-
-
-
0.15
-
-
-
-
-
-
125
-
Max.
-
-
-
100
100
0.3
0.6
1.2
1.0
-
400
-
-
10
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=10A
IC=10mA
IE=1A
VCB=80V
VEB=5V
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD5213L3
CYStek Product Specification


Features .
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