CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD6055J3
Spec. No. : C659J3 Issued Date : 2008.06...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD6055J3
Spec. No. : C659J3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6
Features
Low VCE(SAT) Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
Low operating collector voltage Excellent current gain characteristics at very low VCE Suitable for low dropout voltage application Pb-free package
Symbol
BTD6055J3
Outline
TO-252
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PD
PD RθJA RθJC Tj Tstg
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size.
BTD6055J3
Limits
15 10 7 6 9 (Note 1) 1 (Note 2)
15 71.4 (Note 2) 6.25 150 -55~+150
Unit V V V
A
W
°C/W °C/W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C659J3 Issued Date : 2008.06.25 Revised Date : Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCEO ICBO IEBO
*VCE(sat) *VCE(sat) *VBE(sat) *VBE(on)
*hFE *hFE *hFE
fT Cob
Min.
10 450 400 250 100 -
Typ.
-
Max.
100 100 0.2 0.35 1.2 1.2
50
Unit
V nA nA V V V V MHz pF
Test Conditions
IC=1mA, IB=0 VCB=12V, IE=0 VEB=7V, IC=0 IC=3A, IB=20mA IC=5A, IB=20mA IC=3A, IB=...