BTD6055J3 Transistor Datasheet

BTD6055J3 Datasheet, PDF, Equivalent


Part Number

BTD6055J3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD6055J3 Datasheet


BTD6055J3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD6055J3
Spec. No. : C659J3
Issued Date : 2008.06.25
Revised Date :
Page No. : 1/6
Features
Low VCE(SAT)
Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
Low operating collector voltage
Excellent current gain characteristics at very low VCE
Suitable for low dropout voltage application
Pb-free package
Symbol
BTD6055J3
Outline
TO-252
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Note : 1. Single Pulse , Pw380μs,Duty2%.
2. When mounted on a PCB with the minimum pad size.
BTD6055J3
Limits
15
10
7
6
9 (Note 1)
1 (Note 2)
15
71.4 (Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification

BTD6055J3
CYStech Electronics Corp.
Spec. No. : C659J3
Issued Date : 2008.06.25
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCEO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE
*hFE
*hFE
fT
Cob
Min.
10
-
-
-
-
-
-
450
400
250
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
100
100
0.2
0.35
1.2
1.2
-
-
-
-
50
Unit
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=1mA, IB=0
VCB=12V, IE=0
VEB=7V, IC=0
IC=3A, IB=20mA
IC=5A, IB=20mA
IC=3A, IB=60mA
VCE=0.3V, IC=3A
VCE=0.3V, IC=500mA
VCE=0.3V, IC=1A
VCE=0.3V, IC=5A
VCE=6V, IC=500mA, f=20MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD6055J3
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
D6055
BTD6055J3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec. No. : C659J3 Issued Date : 2008. 06.25 Revised Date : Page No. : 1/6 Fe atures • Low VCE(SAT) • Low RCE(SAT ), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low d ropout voltage application • Pb-free package Symbol BTD6055J3 Outline TO-2 52 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25° C) Parameter Collector-Base Voltage Co llector-Emitter Voltage Emitter-Base Vo ltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA= 25℃ Power Dissipation @ TC=25℃ Ther mal Resistance, Junction to Ambient The rmal Resistance, Junction to Case Junct ion Temperature Storage Temperature Sy mbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTD6055J3 Limits 15 10 7 6 9 (Note 1) 1 (Note 2) 15 71..
Keywords BTD6055J3, datasheet, pdf, CYStech, Low, Vcesat, NPN, Epitaxial, Planar, Transistor, TD6055J3, D6055J3, 6055J3, BTD6055J, BTD6055, BTD605, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)