BTD6055J3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec. No. : C659J3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 Features Low VCE(SAT) Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A Low operating collector voltage Excellent current gain characteristics at very low VCE Suitable for low dropout voltage application Pb-free package Symbol BTD6055J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTD6055J3 Limits 15 10 7 6 9 (Note 1) 1 (Note 2) 15 71.4 (Note 2) 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C659J3 Issued Date : 2008.06.25 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCEO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) *hFE *hFE *hFE fT Cob Min. 10 450 400 250 100 - Typ. - Max. 100 100 0.2 0.35 1.2 1.2 50 Unit V nA nA V V V V MHz pF Test Conditions IC=1mA, IB=0 VCB=12V, IE=0 VEB=7V, IC=0 IC=3A, IB=20mA IC=5A, IB=20mA IC=3A, IB=...