BTD6055M3 Transistor Datasheet

BTD6055M3 Datasheet, PDF, Equivalent


Part Number

BTD6055M3

Description

NPN Epitaxial Planar High Current Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD6055M3 Datasheet


BTD6055M3
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 1/6
NPN Epitaxial Planar High Current (High Performance) Transistor
BTD6055M3
Features
Low VCE(SAT)
Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A
Low operating collector voltage
Excellent current gain characteristics at very low VCE
Suitable for low dropout voltage application
Pb-free package
Symbol
BTD6055M3
Outline
SOT-89
BBase
CCollector
EEmitter
BB C CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
Pd
Operating and Storage Temperature Range
Tj ; Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2. When mounted on ceramic with area measuring 40×40×1 mm
BTD6055M3
Limits
15
10
7
6
9
0.6
1 (Note 1)
2 (Note 2)
-55 ~ +150
Unit
V
V
V
A
A
W
°C
CYStek Product Specification

BTD6055M3
CYStech Electronics Corp.
Spec. No. : C659M3
Issued Date : 2008.06.25
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCEO
10
-
- V IC=1mA, IB=0
ICBO - - 100 nA VCB=12V, IE=0
IEBO - - 100 nA VEB=7V, IC=0
*VCE(sat)
-
- 0.2 V IC=3A, IB=20mA
*VCE(sat)
-
- 0.35 V IC=5A, IB=20mA
*VBE(sat)
-
- 1.2 V IC=3A, IB=60mA
*VBE(on)
-
- 1.2 V VCE=0.3V, IC=3A
*hFE 450 - - - VCE=0.3V, IC=500mA
*hFE 400 - - - VCE=0.3V, IC=1A
*hFE 250 - - - VCE=0.3V, IC=5A
fT 100 -
- MHz VCE=6V, IC=500mA, f=20MHz
Cob - - 50 pF VCB=10V, f=1MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTD6055M3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
D6055
BTD6055M3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 NPN Epitaxial Pl anar High Current (High Performance) Tr ansistor BTD6055M3 Features • Low VC E(SAT) • Low RCE(SAT), RCE(SAT)=50 m (typically) at IC=5A • Low operating collector voltage • Excellent curren t gain characteristics at very low VCE • Suitable for low dropout voltage ap plication • Pb-free package Symbol B TD6055M3 Outline SOT-89 B:Base C: Collector E:Emitter BB C CE Absolut e Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitte r Voltage Emitter-Base Voltage Continuo us Collector Current Peak Collector Cur rent Symbol VCBO VCEO VEBO IC ICP Pow er Dissipation Pd Operating and Stora ge Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2. When mounted on ceramic with area measuring 40×40× 1 mm BTD6055M3 Limits 15 10 7 6 9 0.6 1 (Note 1) 2 (Note 2) -55 ~ +150 Unit V V V A A W °C CYStek Product Specification C.
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