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BTD6055M3 Dataheets PDF



Part Number BTD6055M3
Manufacturers CYStech
Logo CYStech
Description NPN Epitaxial Planar High Current Transistor
Datasheet BTD6055M3 DatasheetBTD6055M3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol BTD6055M3 Outline SOT-89 B:Base C:Collector E:Emitter BB C CE Absolute Maximum R.

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CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol BTD6055M3 Outline SOT-89 B:Base C:Collector E:Emitter BB C CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Symbol VCBO VCEO VEBO IC ICP Power Dissipation Pd Operating and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2. When mounted on ceramic with area measuring 40×40×1 mm BTD6055M3 Limits 15 10 7 6 9 0.6 1 (Note 1) 2 (Note 2) -55 ~ +150 Unit V V V A A W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCEO 10 - - V IC=1mA, IB=0 ICBO - - 100 nA VCB=12V, IE=0 IEBO - - 100 nA VEB=7V, IC=0 *VCE(sat) - - 0.2 V IC=3A, IB=20mA *VCE(sat) - - 0.35 V IC=5A, IB=20mA *VBE(sat) - - 1.2 V IC=3A, IB=60mA *VBE(on) - - 1.2 V VCE=0.3V, IC=3A *hFE 450 - - - VCE=0.3V, IC=500mA *hFE 400 - - - VCE=0.3V, IC=1A *hFE 250 - - - VCE=0.3V, IC=5A fT 100 - - MHz VCE=6V, IC=500mA, f=20MHz Cob - - 50 pF VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device BTD6055M3 Package SOT-89 (Pb-free) Shipping 1000 pcs / Tape & Reel Marking D6055 BTD6055M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 3/6 Characteristic Curves Current Gain vs Collector Current 1000 VCE=1V Saturation Voltage vs Collector Current 1000 VCESAT Saturation Voltage-(mV) Current Gain---HFE VCE=0.5V 100 IC=50IB VCE=0.3V HFE 100 10 100 1000 Collector Current ---IC(mA) 10000 10000 Saturation Voltage vs Collector Current VBESAT@IC=50IB 1000 10 1 10 2.5 2 1.5 1 IC=20IB 100 1000 Collector Current ---IC(mA) Power Derating Curve 10000 See Note 2 on page 1 See Note 1 on page 1 Power Dissipation---PD(W) Saturation Voltage-(mV) 0.5 100 10 100 1000 Collector Current--- IC(mA) 10000 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTD6055M3 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 4/6 Carrier Tape Dimension BTD6055M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD6055M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A 123 C BD Marking: Product Name H Year code : 6→2006, 7→2007,… Spec. No. : C659M3 Issued Date : 2008.06.25 Revised Date : Page No. : 6/6 Month code: 1~9, A,B,C E F G Style: Pin 1. Base 2. Collector 3. Emitter I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 DIM Inches Min. Max. A 0.1732 0.1811 B 0.1594 0.1673 C 0.0591 0.0663 D 0.0945 0.1024 E 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM Inches Min. Max. F 0.0583 0.0598 G 0.1165 0.1197 H 0.0551 0.0630 I 0.0138 0.0161 *: Typical Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are.


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