BTD669J3 Transistor Datasheet

BTD669J3 Datasheet, PDF, Equivalent


Part Number

BTD669J3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD669J3 Datasheet


BTD669J3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD669J3
Spec. No. : C625J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 1/8
Features
High breakdown voltage, BVCEO160V
Large continuous collector current capability
Low collector saturation voltage
Pb-free lead plating and halogen-free package
Symbol
BTD669J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTD669J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD669J3
CYStek Product Specification

BTD669J3
CYStech Electronics Corp.
Spec. No. : C625J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
Limits
180
160
6
1
3
0.2
1
10
-55~+150
-55~+150
Unit
V
V
V
A
A
A
W
W
°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
180
160
6
-
-
-
-
-
160
30
100
-
Typ.
-
-
-
-
-
0.25
0.87
0.73
-
-
-
6.3
Max.
-
-
-
100
100
0.5
1.2
1.5
320
-
-
15
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD669J3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTD66 9J3 Spec. No. : C625J3 Issued Date : 2 015.09.14 Revised Date : Page No. : 1/8 Features • High breakdown voltage, BVCEO≥ 160V • Large continuous coll ector current capability • Low collec tor saturation voltage • Pb-free lead plating and halogen-free package Symbo l BTD669J3 Outline TO-252(DPAK) B:B ase C:Collector E:Emitter B CE Or dering Information Device BTD669J3-0-T 3-G Package TO-252 (Pb-free lead plati ng and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment fri endly grade : S for RoHS compliant prod ucts, G for RoHS compliant and green co mpound products Packing spec, T3:2500 p cs/tape & reel, 13” reel Product ran k, zero for no rank products Product na me BTD669J3 CYStek Product Specificat ion CYStech Electronics Corp. Spec. N o. : C625J3 Issued Date : 2015.09.14 Re vised Date : Page No. : 2/8 Absolute M aximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Volta.
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