BTD669M3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD669M3 Spec. No. : C625M3 Issued Date : 2015.09.11 Revised Date : Page No. : 1/7 Features High breakdown voltage, BVCEO≥ 160V Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package Symbol BTD669M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD669M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel Product rank, zero for no rank products Product name BTD669M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C625M3 Issued Date : 2015.09.11 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits 180 160 6 1 3 0.2 0.6 1 (Note 1) 2 (Note 2) -55~+150 -55~+150 Unit V V V A A A W W W °C °C Thermal Characteristics Parameter Symbol Value Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Case RθJC Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm ...