BTD669M3 Transistor Datasheet

BTD669M3 Datasheet, PDF, Equivalent


Part Number

BTD669M3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD669M3 Datasheet


BTD669M3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD669M3
Spec. No. : C625M3
Issued Date : 2015.09.11
Revised Date :
Page No. : 1/7
Features
High breakdown voltage, BVCEO160V
Large continuous collector current capability
Low collector saturation voltage
Pb-free lead plating and halogen-free package
Symbol
BTD669M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD669M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel
Product rank, zero for no rank products
Product name
BTD669M3
CYStek Product Specification

BTD669M3
CYStech Electronics Corp.
Spec. No. : C625M3
Issued Date : 2015.09.11
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
Limits
180
160
6
1
3
0.2
0.6
1 (Note 1)
2 (Note 2)
-55~+150
-55~+150
Unit
V
V
V
A
A
A
W
W
W
°C
°C
Thermal Characteristics
Parameter
Symbol
Value
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
208
125 (Note 1)
62.5 (Note 2)
50
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
180
160
6
-
-
-
-
-
160
30
100
-
Typ.
-
-
-
-
-
0.25
0.87
0.73
-
-
-
6.3
Max.
-
-
-
100
100
0.5
1.2
1.5
320
-
-
15
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD669M3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTD66 9M3 Spec. No. : C625M3 Issued Date : 2 015.09.11 Revised Date : Page No. : 1/7 Features • High breakdown voltage, BVCEO≥ 160V • Large continuous coll ector current capability • Low collec tor saturation voltage • Pb-free lead plating and halogen-free package Symbo l BTD669M3 Outline SOT-89 B:Base C :Collector E:Emitter BCE Ordering Information Device BTD669M3-0-T2-G P ackage SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 p cs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/ta pe & reel Product rank, zero for no ra nk products Product name BTD669M3 CYS tek Product Specification CYStech Elec tronics Corp. Spec. No. : C625M3 Issue d Date : 2015.09.11 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (T a=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base.
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